Abstract: The present invention provides for a RFID tag assembly that is suitable for operation with at least one RFID reader assembly. The RFID tag assembly comprises, inter alia, an antenna member for transmitting and/or receiving an RFID signal, and at least one integrated circuit (IC) for processing the RFID signal and which is configured to communicate, alternatingly and sequentially in time, a first signal transmission and at least one second signal transmission, each defined by a plurality of predetermined signal transmission parameters, to the at least one RFI D reader assembly, utilising time-division multiplexing, wherein the at least one first signal transmission differs from the at least one second signal transmission in at least one of said plurality of predetermined signal transmission parameters.

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal.

Abstract: The present invention provides for a RFID tag assembly that is suitable for operation with at least one RFID reader assembly. The RFID tag assembly comprises, inter alia, an antenna member for transmitting and/or receiving an RFID signal, and at least one integrated circuit (1C) for processing the RFID signal and which is configured to communicate, alternatingly and sequentially in time, a first signal transmission and at least one second signal transmission, each defined by a plurality of predetermined signal transmission parameters, to the at least one RFI D reader assembly, utilising time-division multiplexing, wherein the at least one first signal transmission differs from the at least one second signal transmission in at least one of said plurality of predetermined signal transmission paameters.

Abstract: The present invention provides for a RFID tag assembly that is suitable for operation with at least one RFID reader assembly. The RFID tag assembly comprises, inter alia, an antenna member for transmitting and/or receiving an RFID signal, and at least one integrated circuit (1C) for processing the RFID signal and which is configured to communicate, alternatingly and sequentially in time, a first signal transmission and at least one second signal transmission, each defined by a plurality of predetermined signal transmission parameters, to the at least one RFI D reader assembly, utilising time-division multiplexing, wherein the at least one first signal transmission differs from the at least one second signal transmission in at least one of said plurality of predetermined signal transmission paameters.

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal.

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal.

Abstract: Measurement apparatus, for generating a first output signal indicative of a measurand, comprises: a first oscillator circuit and a second oscillator circuit, each oscillator circuit being arranged to generate a respective oscillating output signal and comprising at least a respective first component having a property determining a respective output frequency of the respective oscillating output signal; a sensor for sensing said measurand, the sensor comprising said first component of the first oscillator circuit, said property of said first component of the first oscillator circuit being dependent upon said measurand; and circuitry arranged to receive said oscillating output signals and generate said first output signal, said first output signal being indicative of a number of cycles of one of the first and second oscillating output signals in a time period determined by a period of the other of said first and second oscillating output signals.

Abstract: A conformable matrix display device is provided with row conductors on the conformable carrier, each for a respective row of the matrix of pixel circuits. Each row conductor has serpentine trajectories in spaces between the pixel circuits in the respective row. Power supply voltage and selection pulse signals are transmitted over the same row conductors. Each row conductor is connected to supply voltage and selection inputs of the pixel circuits in the respective row. Each pixel circuit has a pulse transmission circuit coupled between the selection input and the control input of a de-multiplexing circuit for de-multiplexing data signals on column conductors. In this way the power supply voltage and the selection signal can be supplied making shared use of space between the pixel circuits. Thus the number of conductors in the matrix display device is reduced, which enables a greater distance between the conductors and/or bends in the conductors, which makes the circuit more stretchable and/or bendable.

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal.

Abstract: A conformable matrix display device is provided with row conductors on the conformable carrier, each for a respective row of the matrix of pixel circuits. Each row conductor has serpentine trajectories in spaces between the pixel circuits in the respective row. Power supply voltage and selection pulse signals are transmitted over the same row conductors. Each row conductor is connected to supply voltage and selection inputs of the pixel circuits in the respective row. Each pixel circuit has a pulse transmission circuit coupled etween the selection input and the control input of a de-multiplexing circuit for de-multiplexing data signals on column conductors. In this way the power supply voltage and the selection signal can be supplied making shared use of space between the pixel circuits. Thus the number of conductors in the matrix display device is reduced, which enables a greater distance between the conductors and/or bends in the conductors, which makes the circuit more stretchable and/or bendable.

Abstract: A TFT device is manufactured starting from a substrate with mutually insulated elongated strips of semi-conductor material. A stack of layers over the strips on the substrate, the stack comprising a gate electrode layer. A multi-level resist layer is provided over the gate electrode layer. The multi-level resist layer defines gate and source drain regions, the channel running in parallel with the direction of the strips. Gate portions in the resist layer cross source drain regions in the resist layer, overreaching the source drain regions on either side at least by a distance corresponding to a pitch of the strips.

Abstract: A TFT device is manufactured starting from a substrate with mutually insulated elongated strips of semi-conductor material. A stack of layers over the strips on the substrate, the stack comprising a gate electrode layer. A multi-level resist layer is provided over the gate electrode layer. The multi-level resist layer defines gate and source drain regions, the channel running in parallel with the direction of the strips. Gate portions in the resist layer cross source drain regions in the resist layer, overreaching the source drain regions on either side at least by a distance corresponding to a pitch of the strips.