Patents by Inventor Brian J. Modtland

Brian J. Modtland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical vapor transport growth of two-dimensional transition-metal dichalcogenides
    Patent number: 10988842
    Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: April 27, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Brian J. Modtland, Jing Kong, Marc A. Baldo, Efren Navarro-Moratalla, Xiang Ji
  • Chemical Vapor Transport Growth of Two-Dimensional Transition-Metal Dichalcogenides
    Publication number: 20190330735
    Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
    Type: Application
    Filed: April 17, 2018
    Publication date: October 31, 2019
    Applicant: Massachusetts Institute of Technology
    Inventors: Brian J. Modtland, Jing Kong, Marc A. Baldo, Efren Navarro-Moratalla, Xiang Ji