Abstract: Systems and methods relate to memory operations in a memory array. A compare operation is performed using a sense amplifier. True and complement versions of a search bit are compared with true and complement versions of a data bit stored in a data row of the memory array to generate true and complement sense amplifier inputs. The true and complement sense amplifier inputs are amplified in the sense amplifier to generate a single-ended match signal. The single-ended match signal can be aggregated with other single-ended match signals in the data row to determine whether there is a hit or miss for a compare operation on the entire data row.

Abstract: A method and circuit for implementing precise eFuse resistance measurement, and a design structure on which the subject circuit resides are provided. An eFuse sense amplifier coupled to an eFuse array and used for current measurements includes balanced odd and even bitlines, and a plurality of programmable reference resistors connected to the balanced odd and even bitlines. First a baseline current measurement is made through one of the programmable reference resistors, and used to identify a network baseline resistance. A current measurement is made for an eFuse path including a selected eFuse and used to identify the resistance of the selected eFuse.

Abstract: A method and circuit for implementing an eFuse sense amplifier, and a design structure on which the subject circuit resides are provided. A sensing circuit includes a pair of cross-coupled inverters, each formed by a pair of series connected P-channel field effect transistors (PFETs) and an N-channel field effect transistor (NFET). A first pull-up resistor is coupled between a positive voltage supply rail and a first sensing node of the sensing circuit. A second pull-up resistor is coupled between a positive voltage supply rail and a second sensing node of the sensing circuit. A first bitline is coupled to the first sensing node of the sensing circuit and a second bitline coupled to the second sensing node of the sensing circuit. One of a respective reference resistor and a respective eFuse cell is selectively coupled to the first bitline and the second bitline.

Abstract: A method and circuit for implementing Efuse sense amplifier verification, and a design structure on which the subject circuit resides are provided. A first predefined resistor value is sensed relative to a reference resistor. A second predefined resistor value is sensed relative to a reference resistor. Responsive to identifying a respective sense amplifier output resulting from the sensing steps of an unblown eFuse and a blown eFuse, valid operation of the sense amplifier is identified.

Abstract: A method and circuit for implementing precise eFuse resistance measurement, and a design structure on which the subject circuit resides are provided. An eFuse sense amplifier coupled to an eFuse array and used for current measurements includes balanced odd and even bitlines, and a plurality of programmable reference resistors connected to the balanced odd and even bitlines. First a baseline current measurement is made through one of the programmable reference resistors, and used to identify a network baseline resistance. A current measurement is made for an eFuse path including a selected eFuse and used to identify the resistance of the selected eFuse.

Abstract: A method and circuit for implementing eFuse resistance screening, and a design structure on which the subject circuit resides are provided. An eFuse is sensed using a first reference resistor. Responsive to the eFuse being sensed as blown with the first reference resistor, the eFuse is sensed using a second reference resistor having a higher resistance than the first reference resistor. Responsive to the eFuse being sensed as unblown with the second reference resistor, the eFuse is recorded as poorly blown. Reliability concerns are identified quickly and accurately without being required to measure the resistance of the eFuse.

Abstract: A method and circuit for implementing an eFuse sense amplifier, and a design structure on which the subject circuit resides are provided. A sensing circuit includes a pair of cross-coupled inverters, each formed by a pair of series connected P-channel field effect transistors (PFETs) and an N-channel field effect transistor (NFET). A first pull-up resistor is coupled between a positive voltage supply rail and a first sensing node of the sensing circuit. A second pull-up resistor is coupled between a positive voltage supply rail and a second sensing node of the sensing circuit. A first bitline is coupled to the first sensing node of the sensing circuit and a second bitline coupled to the second sensing node of the sensing circuit. One of a respective reference resistor and a respective eFuse cell is selectively coupled to the first bitline and the second bitline.

Abstract: A method and circuit for implementing Efuse sense amplifier verification, and a design structure on which the subject circuit resides are provided. A first predefined resistor value is sensed relative to a reference resistor. A second predefined resistor value is sensed relative to a reference resistor. Responsive to identifying a respective sense amplifier output resulting from the sensing steps of an unblown eFuse and a blown eFuse, valid operation of the sense amplifier is identified.