Abstract: A contact pad includes a first layer of material with a first yield strength and a second layer of material with a second yield strength is laminated to the first layer. A third yield strength of the laminated composite of the first layer and the second layer exceeds the first yield strength and the second yield strength due to the Hall-Petch phenomenon. An overcoat covers an edge of the first layer and the second layer of the contact pad to prevent wear. A method of creating the contact pad or other microelectronic structure includes depositing a first layer of material with a first yield strength on a substrate. A second layer of material with a second yield strength is deposited on the first layer. An edge of the first layer and the second layer is coated with an overcoat material to prevent wear of the first and second layers.

Abstract: A contact pad includes a first layer of material with a first yield strength and a second layer of material with a second yield strength is laminated to the first layer. A third yield strength of the laminated composite of the first layer and the second layer exceeds the first yield strength and the second yield strength due to the Hall-Petch phenomenon. An overcoat covers an edge of the first layer and the second layer of the contact pad to prevent wear. A method of creating the contact pad or other microelectronic structure includes depositing a first layer of material with a first yield strength on a substrate. A second layer of material with a second yield strength is deposited on the first layer. An edge of the first layer and the second layer is coated with an overcoat material to prevent wear of the first and second layers.

Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 ?·?m2.

Abstract: A magnetic sensor includes a magnetic layer comprising magnetic material and a grain refining agent. The magnetic layer having a grain-refined magnetic layer surface. A layer adjacent the magnetic layer has a layer surface that conforms to the grain-refined magnetic layer surface.

Abstract: A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10?3.

Abstract: A tunneling magnetoresistive stack includes a first ferromagnetic layer, a tunnel barrier layer on the first ferromagnetic layer, and a second ferromagnetic layer on the tunnel barrier layer. The tunneling magnetoresistive stack exhibits a negative exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer indicating that the tunneling magnetoresistive stack has a high quality tunnel barrier layer.