Patents by Inventor Brian Keith Peterson
Brian Keith Peterson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8137764Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.Type: GrantFiled: May 11, 2004Date of Patent: March 20, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Jean Louise Vincent, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Aaron Scott Lukas, Brian Keith Peterson, Mark Daniel Bitner
-
Patent number: 7785740Abstract: The invention relates to an improvement in a cell which is normally susceptible to damage from overcharging comprised of a negative electrode, a positive electrode, and an electrolyte comprised of an overcharge protection salt carried in a carrier or solvent. Representative overcharge protection salts are embraced by the formula: MaQ where M is an electrochemically stable cation selected from the group consisting of alkali metal, alkaline earth metal, tetraalkylammonium, or imidazolium groups, and Q is a borate or heteroborate cluster and a is the integer 1 or 2.Type: GrantFiled: April 1, 2005Date of Patent: August 31, 2010Assignee: Air Products and Chemicals, Inc.Inventors: Khalil Amine, Jun Liu, Krishnakumar Jambunathan, Brian Keith Peterson, Gennady Dantsin
-
Publication number: 20090298671Abstract: Silica-based materials and films having a dielectric constant of 3.7 or below and compositions and methods for making and using same are disclosed herein. In one aspect, there is provided a composition for preparing a silica-based material comprising an at least one silica source, a solvent, an at least one porogen, optionally a catalyst, and optionally a flow additive wherein the solvent boils at a temperature ranging from 90° C. to 170° C. and is selected from the group of compounds represented by the following formulas: HO—CHR8—CHR9—CH2—CHR10R11 where R8, R9, R10 and R11 can independently be an alkyl group ranging from 1 to 4 carbon atoms or a hydrogen atom; and R12—CO—R13 where R12 is a hydrocarbon group having from 3 to 6 carbon atoms; R13 is a hydrocarbon group having from 1 to 3 carbon atoms; and mixtures thereof.Type: ApplicationFiled: August 10, 2009Publication date: December 3, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Scott Jeffrey Weigel, Shrikant Narendra Khot, James Edward Mac Dougall, Thomas Albert Braymer, John Francis Kirner, Brian Keith Peterson
-
Patent number: 7482676Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: July 11, 2006Date of Patent: January 27, 2009Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
-
Patent number: 7307343Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: GrantFiled: May 30, 2002Date of Patent: December 11, 2007Assignee: Air Products and Chemicals, Inc.Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
-
Patent number: 7294585Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: July 11, 2006Date of Patent: November 13, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, legal representative, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak, Thomas Alan Deis, deceased
-
Patent number: 7186613Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (?) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0?), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: GrantFiled: October 13, 2004Date of Patent: March 6, 2007Assignee: Air Products And Chemicals, Inc.Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
-
Patent number: 7122880Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: GrantFiled: May 20, 2003Date of Patent: October 17, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
-
Publication number: 20040241463Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.Type: ApplicationFiled: May 11, 2004Publication date: December 2, 2004Inventors: Jean Louise Vincent, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Aaron Scott Lukas, Brian Keith Peterson, Mark Daniel Bitner
-
Publication number: 20040197474Abstract: Organosilica glass and organic polymeric films useful for electronic devices and methods for making same are disclosed herein. In one embodiment of the present invention, there is provided a method for enhancing the chemical vapor deposition of a film comprising an organic species comprising: providing a substrate within a reaction chamber; introducing into the chamber gaseous chemical reagents comprising an organic precursor having carbon and hydrogen bonds contained therein and a rate enhancer wherein the rate enhancer is at least one member selected from the group consisting of an oxygen-containing compound; a peroxide compound having the formula R1OOR2; a peracid compound having the formula R3C(O)OC(O)R4; a fluorine-containing compound; and a heavy inert gas; and applying energy to the chemical reagents in the reaction chamber sufficient to induce the reaction of the reagents and deposit the film upon at least a portion of the substrate.Type: ApplicationFiled: April 1, 2003Publication date: October 7, 2004Inventors: Raymond Nicholas Vrtis, Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Mark Daniel Bitner, Eugene Joseph Karwacki, Brian Keith Peterson
-
Patent number: 6716770Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.Type: GrantFiled: May 23, 2001Date of Patent: April 6, 2004Assignee: Air Products and Chemicals, Inc.Inventors: Mark Leonard O'Neill, Brian Keith Peterson, Jean Louise Vincent, Raymond Nicholas Vrtis
-
Publication number: 20040048960Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.Type: ApplicationFiled: May 20, 2003Publication date: March 11, 2004Inventors: Brian Keith Peterson, John Francis Kirner, Scott Jeffrey Weigel, James Edward MacDougall, Lisa Deis, Thomas Albert Braymer, Keith Douglas Campbell, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
-
Publication number: 20030224156Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. These materials are characterized as having a dielectric constant (&kgr;) a dielectric constant of about 3.7 or less; a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of about 15 GPa or greater; and a metal impurity level of about 500 ppm or less. Low dielectric materials are also disclosed having a dielectric constant of less than about 1.95 and a normalized wall elastic modulus (E0′), derived in part from the dielectric constant of the material, of greater than about 26 GPa.Type: ApplicationFiled: May 30, 2002Publication date: December 4, 2003Inventors: John Francis Kirner, James Edward MacDougall, Brian Keith Peterson, Scott Jeffrey Weigel, Thomas Alan Deis, Martin Devenney, C. Eric Ramberg, Konstantinos Chondroudis, Keith Cendak
-
Publication number: 20030049460Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.Type: ApplicationFiled: May 23, 2001Publication date: March 13, 2003Inventors: Mark Leonard O'Neill, Brian Keith Peterson, Jean Louise Vincent, Raymond Nicholas Vrtis
-
Patent number: 5882625Abstract: A faujasite aluminosilicate with a Si/Al ratio in the range of 1.05 to 1.26 having an non-uniform aluminum distribution, synthesized by crystallizing the zeolite from a mixture of alkali metal aluminate and alkali metal silicate wherein the mixture has an alkali metal oxide to silica ratio of at least 1.6 and a water to alkali metal oxide ratio of at least 37. The X-zeolite has utility as a gas separation adsorbent such as separating oxygen from nitrogen in air.Type: GrantFiled: August 8, 1997Date of Patent: March 16, 1999Assignee: Air Products and Chemicals, Inc.Inventors: James Edward Mac Dougall, Thomas Albert Braymer, Charles Gardner Coe, Thomas Richard Gaffney, Brian Keith Peterson