Patents by Inventor Brian L. Justus

Brian L. Justus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a semiconductor device by forming a nanochannel mask
    Patent number: 5332681
    Abstract: The present invention provides a method for depositing a pattern of deposd material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the mask having channels therethrough which are arranged in a pattern and which have an average diameter of less than 1 micron; and depositing a material selected from the group of sources consisting of ions, electrons, photons, metals and semiconductor materials through the glass mask into or onto the substrate. The present invention also provides semiconductor devices made by this method.
    Type: Grant
    Filed: June 12, 1992
    Date of Patent: July 26, 1994
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Ronald J. Tonucci, Brian L. Justus
  • Method of making a semiconductor device using a nanochannel glass matrix
    Patent number: 5306661
    Abstract: The present invention provides a method of forming a semiconductor device mprising the steps of:forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter of less than 1 micron;partially etching one end of the acid etchable rods surface of the glass block to form cavities in the glass block on one surface thereof having an average diameter of less than 1 micron;depositing material(s) in the cavities to form a semiconductor device.The present invention also provides a method for forming a semiconductor device in which the acid etchable glass rods are completely etched and the deposition material(s) is deposited to fill the nanochannels formed by the etching.The present invention also provides semiconductor devices made by these methods.
    Type: Grant
    Filed: April 29, 1993
    Date of Patent: April 26, 1994
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Ronald J. Tonucci, Brian L. Justus
  • Nanochannel glass matrix used in making mesoscopic structures
    Patent number: 5264722
    Abstract: The present invention provides a method of forming a semiconductor device mprising the steps of:forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter of less than 1 micron;partially etching one end of the acid etchable rods surface of the glass block to form cavities in the glass block on one surface thereof having an average diameter of less than 1 micron;depositing material(s) in the cavities to form a semiconductor device.The present invention also provides a method for forming a semiconductor device in which the acid etchable glass rods are completely etched and the deposition material(s) is deposited to fill the nanochannels formed by the etching.The present invention also provides semiconductor devices made by these methods.
    Type: Grant
    Filed: June 12, 1992
    Date of Patent: November 23, 1993
    Assignee: The United States of America as Represented by the Secretary of the Navy
    Inventors: Ronald J. Tonucci, Brian L. Justus
  • Nanochannel filter
    Patent number: 5234594
    Abstract: The present invention provides a wafer-like glass filter having channels therethrough having an average diameter of less than 1 micron, and further provides methods of making the filter.
    Type: Grant
    Filed: June 12, 1992
    Date of Patent: August 10, 1993
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Ronald J. Tonucci, Brian L. Justus