Patents by Inventor Brian M. Krzanich

Brian M. Krzanich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4790920
    Abstract: A process for depositing a layer of reactively sputtered aluminum oxide on a wafer is disclosed, having particular application in semiconductor fabrication. A wafer is provided with a layer of aluminum (or aluminum with 1% silicon) having a thickness of generally one micron, using common semiconductor fabrication techniques. The wafer with its aluminum layer is disposed within a vacuum chamber which has been evacuated. An argon sputtering gas is introduced into the chamber along with oxygen, such that aluminum oxide is formed in the plasma region and deposited on the aluminum layer. Using this technique, a 300 angstroms aluminum oxide layer is deposited over the existing aluminum layer on the wafer, thereby forming an aluminum oxide cap layer. The presence of the aluminum oxide cap layer has been found to significantly reduce the formation of mouse bites and notches, as well as initial film stress during fabrication.
    Type: Grant
    Filed: January 8, 1987
    Date of Patent: December 13, 1988
    Assignee: Intel Corporation
    Inventor: Brian M. Krzanich