Patents by Inventor Brian Matthew McSkimming

Brian Matthew McSkimming has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11677042
    Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.
    Type: Grant
    Filed: March 29, 2020
    Date of Patent: June 13, 2023
    Assignee: META PLATFORMS TECHNOLOGIES, LLC
    Inventors: Markus Broell, Michael Grundmann, David Hwang, Stephan Lutgen, Brian Matthew Mcskimming, Anurag Tyagi
  • Publication number: 20200313036
    Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.
    Type: Application
    Filed: March 29, 2020
    Publication date: October 1, 2020
    Inventors: Markus BROELL, Michael GRUNDMANN, David HWANG, Stephan LUTGEN, Brian Matthew MCSKIMMING, Anurag TYAGI
  • Patent number: 10566214
    Abstract: Embodiments relate to forming nanoporous contacts on a receiving substrate without using a seed layer on the receiving substrate. The nanoporous contacts can be used to create bonds between electronic components and the receiving substrate. To form the contacts, a photoresist mask is created on the receiving substrate by a photolithographic process. Through a sputtering process, portions of co-alloy on a depositing substrate are transferred to the receiving substrate with the photoresist mask. The photoresist mask is removed from the receiving substrate. The remaining co-alloy portions on the receiving substrate undergo a de-alloying process to form an array of nanoporous contacts.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: February 18, 2020
    Assignee: Facebook Technologies, LLC
    Inventors: John Michael Goward, Brian Matthew McSkimming, Chloe Astrid Marie Fabien, Stephen John Holmes