Abstract: A reactor apparatus includes a first chamber coupled to a first source of vacuum, a monitor chamber isolated from the first chamber and coupled to a second source of vacuum, and at least one removable deposition monitor disposed in the monitor chamber.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: This invention enables high temperature superconducting (HTS) metal oxide materials ReBa2Cu3Ox ((RE)BCO) to carry high superconducting currents at high current densities under high magnetic field (?3 Tesla), in all orientations of the field, and at high temperatures (65 Kelvin). The superconductor is adapted to carry current in a superconducting state, with the superconductor having a current (I) carrying capacity of at least 250 A/cm width, in a field of 3 Tesla (T), at 65 Kelvin (K), at all angles relative to the coated conductor. More preferably, the current carrying capacity extends through the range of substantially 250 A/cm to 500 A/cm. Excellent performance is achieved by use of intrinsic pinning centers in the HTS compound. The invention preferably does not require the addition of extra elements or compounds or particles to the superconducting compound during synthesis, nor does it require extra process steps.

Abstract: A reactor apparatus includes a first chamber coupled to a first source of vacuum, a monitor chamber isolated from the first chamber and coupled to a second source of vacuum, and at least one removable deposition monitor disposed in the monitor chamber.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: A reactor apparatus includes a first chamber coupled to a first source of vacuum, a monitor chamber isolated from the first chamber and coupled to a second source of vacuum, and at least one removable deposition monitor disposed in the monitor chamber.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: A heater for growing a thin film on substrates contained on a substrate support member includes a plurality of heater elements. The substrate support member containing the substrates is at least partially surrounded by the plurality of heater elements. At least two of the plurality of heater elements are moveable with respect to one another so as to provide external access to the substrate support member. An oxygen pocket is formed in one of the heater elements or a separate oxygen pocket member and is used for oxidation of the film on the substrates.

Abstract: A method and apparatus for providing dynamic and remote tuning of a cryo-cooled bandpass filter is disclosed. The device includes resonator element and a voltage sensitive element as part of the capacitance in a narrow band filter circuit. A varactor such as a GaAs varactor may be used. Alternatively, a capacitor having a voltage-sensitive dielectric such as SrTiO3 may be used. A computer may be connected to the varactor to provide for automated tuning. The voltage-sensitive capacitor may be integral with the resonator element. The invention provides for remote and dynamic tuning of a narrow bandpass filter while located within its sealed cryo-cooled environment.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.