Patents by Inventor Brian P. Wagner
Brian P. Wagner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240101533Abstract: The present disclosure relates to methods and intermediates useful for preparing a compound of formula I: or a co-crystal, solvate, salt or combination thereof.Type: ApplicationFiled: June 5, 2023Publication date: March 28, 2024Inventors: Kevin McCormack Allan, Amanda Lynn Vandehey, Gediminas Brizgys, Sachin Dhar, Ian James Doxsee, Alex Goldberg, Lars V. Heumann, Zilin Huang, Nathaniel Thomas Kadunce, Shahrokh Kazerani, Willard Lew, Vinh Xuan Ngo, Brian Michael O`Keefe, Trevor James Rainey, Benjamin James Roberts, Bing Shi, Dietrich P. Steinhuebel, Winston C. Tse, Anna Michelle Wagner, Xianghong Wang, Scott Alan Wolckenhauer, Chloe Yuyi Wong, Jennifer R. Zhang
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Publication number: 20170162513Abstract: A method of forming a superconductor device is provided. The method includes depositing a non-oxide based dielectric layer over a substrate, depositing a photoresist material layer over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material to form a set of superconducting contacts.Type: ApplicationFiled: December 8, 2015Publication date: June 8, 2017Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: JAMES T. KELLIHER, SANDRO J. DI GIACOMO, CORY E. SHERMAN, BRIAN P. WAGNER
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Patent number: 9653398Abstract: A method of forming a superconductor device is provided. The method includes depositing a non-oxide based dielectric layer over a substrate, depositing a photoresist material layer over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material to form a set of superconducting contacts.Type: GrantFiled: December 8, 2015Date of Patent: May 16, 2017Assignee: Northrop Grumman Systems CorporationInventors: James T. Kelliher, Sandro J. Di Giacomo, Cory E. Sherman, Brian P. Wagner
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Patent number: 8278666Abstract: The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.Type: GrantFiled: June 23, 2010Date of Patent: October 2, 2012Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Sean R. McLaughlin, Thomas J. Knight, Robert M. Young, Brian P. Wagner, David A. Kahler, Andre E. Berghmans, David J. Knuteson, Ty R. McNutt, Jerry W. Hedrick, Jr., George M. Bates, Kenneth Petrosky
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Patent number: 7888248Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.Type: GrantFiled: July 13, 2007Date of Patent: February 15, 2011Assignee: Northrop Grumman Systems CorporationInventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight
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Patent number: 7855108Abstract: A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).Type: GrantFiled: February 26, 2010Date of Patent: December 21, 2010Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Brian P. Wagner, David J. Knuteson, Michael E. Aumer, Andre Berghmans, Darren Thomson, David Kahler
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Publication number: 20100192840Abstract: A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).Type: ApplicationFiled: February 26, 2010Publication date: August 5, 2010Applicant: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Brian P. Wagner, David J. Knuteson, Michael E. Aumer, Andre Berghmans, Darren Thomson, David Kahler
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Patent number: 7683400Abstract: A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).Type: GrantFiled: June 26, 2006Date of Patent: March 23, 2010Assignee: Northrop Grumman Systems CorporationInventors: Narsingh B. Singh, Brian P. Wagner, David J. Knuteson, Michael E. Aumer, Andre Berghmans, Darren Thomson, David Kahler
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Patent number: 7525099Abstract: A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of ?- and ?-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter.Type: GrantFiled: January 30, 2007Date of Patent: April 28, 2009Assignee: Northrop Grumman Systems CorporationInventors: Narsingh Bahadur Singh, Aaron A. Pesetski, Andre Berghmans, Brian P. Wagner, David Kahler, David J. Knuteson, Darren Thomson
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Publication number: 20090014756Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.Type: ApplicationFiled: July 13, 2007Publication date: January 15, 2009Inventors: Narsingh Bahadur Singh, Brian P. Wagner, David J. Knuteson, David Kahler, Andre E. Berghmans, Michael Aumer, Jerry W. Hedrick, Marc E. Sherwin, Michael M. Fitelson, Mark S. Usefara, Sean McLaughlin, Travis Randall, Thomas J. Knight
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Publication number: 20080179534Abstract: A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of ?- and ?-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter.Type: ApplicationFiled: January 30, 2007Publication date: July 31, 2008Inventors: Narsingh Bahadur Singh, Aaron A. Pesetski, Andre Berghmans, Brian P. Wagner, David Kahler, David J. Knuteson, Darren Thomson