Abstract: Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Abstract: An image sensing device including a Geiger-mode avalanche photodiode (GmAPD), a read out integrated circuit (ROIC), and a limit resistor connected to the GmAPD and the ROIC in series, wherein the ROIC includes an active quenching circuit.

Abstract: A computer-based system may quantify, based on the plurality of instances of a feature indicated by image data, an attribute (e.g., a color, a shape, a material, a texture, etc.) of the plurality of instances of the feature. The system may also quantify an attribute of an instance of the feature of the plurality of instances of the feature. The system may modify the image data to indicate the instance of the feature if/when a value of the quantified attribute of the instance of the feature exceeds a value of the quantified attribute of the plurality of instances of the feature by a threshold. Functionality (e.g., defective, non-defective, potentially defective, etc.) of the unit may be classified based on the modified image data.

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Abstract: Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Abstract: Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Abstract: Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Abstract: An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed partially through the backside (substrate) of each APD in the array, wherein the via is offset from the active region of each said APD.

Abstract: A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

Abstract: An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed through the backside (substrate) of each APD in the array.

Abstract: An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed partially through the backside (substrate) of each APD in the array, wherein the via is offset from the active region of each said APD.

Abstract: A scalable fuse design for individual pixels of a focal plane array of photodiodes comprises a fuse disposed on the upper surface of each photodiode in the array, wherein the fuse is situated proximal to a side of each photodiode. The fuse of each photodiode is electrically coupled to the active region thereof via a first bus and is electrically coupled to an ROIC via a second bus.

Abstract: A scalable fuse design for individual pixels of a focal plane array of photodiodes comprises a fuse disposed on the upper surface of each photodiode in the array, wherein the fuse is situated proximal to a side of each photodiode. The fuse of each photodiode is electrically coupled to the active region thereof via a first bus and is electrically coupled to an ROIC via a second bus.

Abstract: An avalanche photodiode (APD) array with reduced cross talk comprises, in the illustrative embodiment, a 2D array of Geiger-mode APDs, wherein a via is formed through the backside (substrate) of each APD in the array.