Abstract: A cloud-based security solution that provides a robust and secure framework for managing and enforcing security policies related to various resources managed in the cloud is disclosed. The cloud-based security solution is implemented by a security zone policy enforcement system in a cloud service provider infrastructure. The system receives a request to perform an operation on a resource and determines a compartment associated with the resource. The system determines that the compartment is associated with a security zone and determines a set of one or more security zone policies applicable to the resource. The system then determines that the operation on the resource is permitted based on the set of one or more security zone policies and responsive to determining that the operation on the resource is permitted, allows the operation to be performed on the resource.

Abstract: A cloud-based security solution that provides a robust and secure framework for managing and enforcing security policies related to various resources managed in the cloud is disclosed. The cloud-based security solution is implemented by a security zone policy enforcement system in a cloud service provider infrastructure. The system receives a request to perform an operation on a resource and determines a compartment associated with the resource. The system determines that the compartment is associated with a security zone and determines a set of one or more security zone policies applicable to the resource. The system then determines that the operation on the resource is permitted based on the set of one or more security zone policies and responsive to determining that the operation on the resource is permitted, allows the operation to be performed on the resource.

Abstract: A cloud-based security solution that provides a robust and secure framework for managing and enforcing security policies related to various resources managed in the cloud is disclosed. The cloud-based security solution is implemented by a security zone policy enforcement system in a cloud service provider infrastructure. The system receives a request to perform an operation on a resource and determines a compartment associated with the resource. The system determines that the compartment is associated with a security zone and determines a set of one or more security zone policies applicable to the resource. The system then determines that the operation on the resource is permitted based on the set of one or more security zone policies and responsive to determining that the operation on the resource is permitted, allows the operation to be performed on the resource.

Abstract: A modular system which may aid in collection of bodily fluids, and more particularly collection of sperm. The system may include a plurality of components including a sleeve, a core and at least one cap. The system may be easily assembled and disassembled for interchangeability of each of its components as well as for cleaning and disinfection. The system may include a substantially rigid outer shell with a more malleable inner core. The core may be a single piece or multiple pieces and may be interchangeable depending on a user's preference and may reside within the outer shell but may be easily removable from the outer shell. A first end cap may include a face of substantially the same material as the inner core and may be interchangeable based on user preference as well.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

Abstract: A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.

Abstract: A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

Abstract: An evidence-based policy manager generates a permission grant set for a code assembly received from a resource location. The policy manager executes in a computer system (e.g., a Web client or server) in combination with the verification module and class loader of the run-time environment. The permission grant set generated for a code assembly is applied in the run-time call stack to help the system determine whether a given system operation by the code assembly is authorized. The policy manager may determine a subset of the permission grant set based on a subset of the received code assembly's evidence, in order to expedite processing of the code assembly. When the evidence subset does not yield the desired permission subset, the policy manager may then perform an evaluation of all evidence received.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

Abstract: A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.

Abstract: A semiconductor component that includes gate electrodes and shield electrodes and a method of manufacturing the semiconductor component. A semiconductor material has a device region, a gate contact region, a termination region, and a drain contact region. One or more device trenches is formed in the device region and one or more termination trenches is formed in the edge termination region. Shielding electrodes are formed in portions of the device trenches that are adjacent their floors. A gate dielectric material is formed on the sidewalls of the trenches in the device region and gate electrodes are formed over and electrically isolated from the shielding electrodes. The gate electrodes in the trenches in the device region are connected to the gate electrodes in the trenches in the gate contact region. The shielding electrodes in the trenches in the device region are connected to the shielding electrodes in the termination region.

Abstract: This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.

Abstract: An evidence-based policy manager generates a permission grant set for a code assembly received from a resource location. The policy manager executes in a computer system (e.g., a Web client or server) in combination with the verification module and class loader of the run-time environment. The permission grant set generated for a code assembly is applied in the run-time call stack to help the system determine whether a given system operation by the code assembly is authorized. The policy manager may determine a subset of the permission grant set based on a subset of the received code assembly's evidence, in order to expedite processing of the code assembly. When the evidence subset does not yield the desired permission subset, the policy manager may then perform an evaluation of all evidence received.

Abstract: An evidence-based policy manager generates a permission grant set for a code assembly received from a resource location. The policy manager executes in a computer system (e.g., a Web client or server) in combination with the verification module and class loader of the run-time environment. The permission grant set generated for a code assembly is applied in the run-time call stack to help the system determine whether a given system operation by the code assembly is authorized. The policy manager may determine a subset of the permission grant set based on a subset of the received code assembly's evidence, in order to expedite processing of the code assembly. When the evidence subset does not yield the desired permission subset, the policy manager may then perform an evaluation of all evidence received.

Abstract: Methods and apparatuses are described to process an n-dimensional data set acquired from a measurement on a biological sample. A method includes dividing an n-dimensional data set into n-dimensional sub-regions, wherein a size of a dimension of an n-dimensional sub-region is less than a size of the dimension of the n-dimensional data set. The n-dimensional sub-regions are stored on a computer readable medium and the computer readable medium is accessible to a data processing system. The n-dimensional data set can exceed an addressable memory limit of the data processing system and mathematical operations are performed on the n-dimensional data set.

Abstract: A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a buried trench-poly gate runner electrically contacting to a trench gate of the trenched MOSFET. The buried trench-poly gate runner for functioning as a gate runner to increase gate transmission area and a contact area to a gate contact metal for reducing a gate resistance.

Abstract: This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a fist conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.

Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.