Patents by Inventor Brian Roberds

Brian Roberds has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit with dynamic threshold voltage
    Patent number: 6261878
    Abstract: An integrated circuit and method for making it are described. The integrated circuit includes a first insulating layer formed on a substrate and a body strap of a first conductivity type that is formed on the first insulating layer. A second insulating layer is formed on the first insulating layer adjacent to the body strap and a film is formed on the second insulating layer. The integrated circuit also includes a gate electrode formed on the film. A plurality of doped regions of a second conductivity type are formed within the film that extend from the surface of the film to the surface of the second insulating layer. The doped regions have junctions that are each spaced from the body strap by at least about 500 angstroms.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: July 17, 2001
    Assignee: Intel Corporation
    Inventors: Brian S. Doyle, Brian Roberds, Rafael Rios
  • Method of increasing the mobility of MOS transistors by use of localized stress regions
    Patent number: 6228694
    Abstract: A method of modifying the mobility of a transistor. First, a substance is implanted into a substrate. The substrate is then annealed such that the implanted substance forms at least one void in the substrate. Then, a transistor is formed on the substrate.
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: May 8, 2001
    Assignee: Intel Corporation
    Inventors: Brian S. Doyle, Brian Roberds, Jin Lee