Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.

Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.

Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.

Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.

Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.

Abstract: Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system includes a silicon wafer including a first side and a second side opposite the first side. The silicon wafer also includes an array of photodiodes on the first side of the silicon wafer with the photodiodes electrically isolated from each other as well as an array of grid holes on the second side of the silicon wafer. Each grid hole of the array of grid holes is aligned with a respective photodiode of the array of photodiodes. The structure also includes a layer of scintillating material disposed over the array of grid holes on the second side of the silicon wafer. The structure further includes a layer of reflective material disposed on the layer of scintillating material.

Abstract: The present invention provides a method and apparatus for the production and labeling of objects in a manner suitable for the prevention and detection of counterfeiting. Thus, the system incorporates a variety of features that make unauthorized reproduction difficult. In addition, the present invention provides an efficient means for the production of labels and verification of authenticity, whereby a recording apparatus which includes a recording medium, having anisotrophic optical domains, along with a means for transferring a portion of the recording medium to a carrier, wherein a bulk portion of the recording medium has macroscopically detectable anisotrophic optical properties and the detecting apparatus thereon.

Abstract: Apparatus, systems, and methods disclosed herein may transpose image blocks from successively-captured versions of an image according to relative movement between an image capture device and the scene being captured. The transposition may provide for alignment of the successively-captured images notwithstanding the movement. The transposed image blocks from the successive images are composited in the frequency domain by integrating frequency domain coefficients from each into a composite final image. Additional embodiments are disclosed.

Abstract: The present invention provides a method and apparatus for the production and labeling of objects in a manner suitable for the prevention and detection of counterfeiting. Thus, the system incorporates a variety of features that make unauthorized reproduction difficult. In addition, the present invention provides an efficient means for the production of labels and verification of authenticity, whereby a recording apparatus which includes a recording medium, having anisotrophic optical domains, along with a means for transferring a portion of the recording medium to a carrier, wherein a bulk portion of the recording medium has macroscopically detectable anisotrophic optical properties and the detecting apparatus thereon.

Abstract: Apparatus, systems, and methods disclosed herein may transpose image blocks from successively-captured versions of an image according to relative movement between an image capture device and the scene being captured. The transposition may provide for alignment of the successively-captured images notwithstanding the movement. The transposed image blocks from the successive images are composited in the frequency domain by integrating frequency domain coefficients from each into a composite final image. Additional embodiments are disclosed.

Abstract: A pixel array, composed of rows and columns, has a first row which includes pixels of a first color alternating with pixels of a second color. A second row of the array adjacent to the first row includes alternating pixels of the first color and second colors aligned in a column direction with the colors in the first row. A third row of the array is adjacent to the second row and includes pixels of a third color alternating with pixels of a fourth color. A fourth row of the array is adjacent to the third row and includes alternating pixels of the third and fourth colors aligned in a column direction with the colors of the third row. A readout circuit is connected to the array and reads out the pixel signals contained in each row in an odd/even interlaced fashion.

Abstract: The present invention provides a method and apparatus for the production and labeling of objects in a manner suitable for the prevention and detection of counterfeiting. Thus, the system incorporates a variety of features that make unauthorized reproduction difficult. In addition, the present invention provides an efficient means for the production of labels and verification of authenticity, whereby a recording apparatus which includes a recording medium, having anisotrophic optical domains, along with a means for transferring a portion of the recording medium to a carrier, wherein a bulk portion of the recording medium has macroscopically detectable anisotrophic optical properties and the detecting apparatus thereon.

Abstract: A seed layer structure for improved crystallographic orientation of grains in a hard magnetic material is disclosed. The seed layer structure is comprised of alternating layers of a metal and a dielectric. Hard magnetic materials deposited on the seed layer structure have superior properties and performance in providing hard bias to a ferromagnetic layer in a magnetic sensor. The seed layer structure also accommodates a relatively large total thickness, which is preferable in magnetic sensors with an ultra contiguous junction arrangement.

Abstract: X-ray image degradation due to scattered radiation is reduced in a system using a planar sensor sheet by providing an X-ray absorbing sheet in front of the sensor sheet, or in back of the sensor sheet, or both. The thickness and material of construction of each X-ray absorbing sheet depends on the X-ray absorptivity of the material used, and whether the absorbing sheet is in front or in back of the sensor sheet. The front absorbing sheet is preferably as close as possible to the sensor sheet. The back absorbing sheet, if used, can be at essentially any distance from the sensor sheet, beyond a certain minimum, consistent with practical space limitations in the overall physical shape and design of the unit.

Abstract: A digital x-ray imaging device and method. The imaging device comprises a top electrode layer; a dielectric layer; a sensor layer comprising a photoconductive layer and a plurality of pixels, each pixel comprising a charge-collecting electrode; a thin film transistor (TFT) readout matrix connected to the charge-collecting electrodes; and a variable power supply adapted to provide a range of voltages between the top electrode layer and the TFT readout matrix. The variable power supply may comprise a programmable power supply. The method comprises varying the voltage between the top electrode layer and the TFT readout matrix of a TFT-based direct digital x-ray imaging device to provide an acceptable signal-to-noise ratio over a greater range of exposures than provided at a single voltage. The method may be particularly useful in non-destructive testing applications.

Abstract: X-ray image degradation due to scattered radiation is reduced in a system using a planar sensor sheet by providing an X-ray absorbing sheet in front of the sensor sheet, or in back of the sensor sheet, or both. The thickness and material of construction of each X-ray absorbing sheet depends on the X-ray absorptivity of the material used, and whether the absorbing sheet is in front or in back of the sensor sheet. The front absorbing sheet is preferably as close as possible to the sensor sheet. The back absorbing sheet, if used, can be at essentially any distance from the sensor sheet, beyond a certain minimum, consistent with practical space limitations in the overall physical shape and design of the unit.

Abstract: A digital x-ray imaging device and method. The imaging device comprises a top electrode layer; a dielectric layer; a sensor layer comprising a photoconductive layer and a plurality of pixels, each pixel comprising a charge-collecting electrode; a thin film transistor (TFT) readout matrix connected to the charge-collecting electrodes; and a variable power supply adapted to provide a range of voltages between the top electrode layer and the TFT readout matrix. The variable power supply may comprise a programmable power supply. The method comprises varying the voltage between the top electrode layer and the TFT readout matrix of a TFT-based direct digital x-ray imaging device to provide an acceptable signal-to-noise ratio over a greater range of exposures than provided at a single voltage. The method may be particularly useful in non-destructive testing applications.

Abstract: A method for developing a set of gain correction coefficients corrected for structural noise to be used in correcting the digital values representing an image captured by a pixelated detector having a plurality of individual sensors. The gain correction coefficients are developed by first obtaining a first set gain correction coefficients using a flat exposure and adjusting the individual sensor gain output so that all sensors produce the same output value, and then applying a smoothing filter to the first set of gain correction coefficients to obtain a new set of corrected gain correction coefficients.

Abstract: A improved thin film recording medium with an underlayer with deliberately induced strain, crystalline defects and dislocations (collectively “faults”) in the grain structure is described. The relatively high number of induced faults results in surprising improvements in recording characteristics such as soft error rate, resolution and SNR of the thin film disk. While the film is being deposited, the sputtering conditions are controlled to grow grains of the underlayer material which tend to be highly faulted by incorporation of atoms of a second material with significantly different atomic characteristics than the underlayer material. Preferably the atoms of the sputtering gas species are incorporated in the film to cause the lattice faults. For example, the faults can be achieved by incorporating sputtering gas atoms, e.g. argon atoms, into a chromium based underlayer.

Abstract: A magnetic layer structure with a layer of cobalt-chromium-platinum-boron composite alloy containing 10% to 20% B in the magnetic layer. The useful magnetic properties of the magnetic layer structure are achieved by the incorporation of a nucleation layer prior to the deposition of the magnetic layer. The resultant magnetic layer structures have coercivity Hc values in between 2,000 and 5,000 Oe, grain sizes between 30 and 200 Angstroms and anisotropic crystallographic orientation with the c-axis of the cobalt-chromium-platinum-boron in the plane of the medium. These magnetic layer structures are suitable for magnetic data storage devices including magnetic disks.