Abstract: The present invention is a heat pipe susceptor for use in a vapor deposition system. The multi-layered refractory material susceptor provides a highly uniform heated surface upon which wafers are placed for heating by a radio frequency (RF) source. Because of the highly uniform surface temperature, susceptors are able to hold a plurality of inch sized diameter wafers and the shape of the surfaces can be designed as the need arises. A cylindrically shaped top and a multi-faced frustum shaped top are examples.

Abstract: An actively cooled effuser for a vapor deposition reactor is placed in very close proximity to a substrate. The actively cooled effuser has combinations of gas directing plates, cooling plates and isolation plates attached together. Reactants and coolant are input into the stack of plates so formed. Selective heating of the substrate surface may occur through the use of heating lamps. Multiple units of the actively cooled effuser and heating lamps may be used in the reactor to form multiple layers on the substrate. The cooling plate has a cooling channel within a few thousandths of an inch of the output side of the stack. The presence of the cooling plates allows the effuser to be placed in very close proximity to the selectively heated substrate.

Abstract: A non-contact polishing apparatus is used for polishing semiconductor planar substances. The substrate is set back from any surface and is held by a chuck fixed within a collar. This substrate holder assembly is placed within an enclosed container that has a non-abrasive solution therein. The container is mounted to a high speed nutating table that provides random motion to the holder assembly. This action provides isotropic polishing with no polishing created defects on the substrate surface.

Abstract: A heat pipe coracle is provide for use in a crystal growth apparatus; the heat pipe coracle includes a coracle ring, the coracle ring being composed of a material resistant to attack from a melt of the crystal growth apparatus and having density less than the melt so as to float upon the melt, the coracle ring having a central opening therethrough, the central opening being of a diameter approximately equal to that of a single crystal pulled from the melt through said central opening, the single crystal being in sliding contact with the coracle ring to insure uniform heat distribution about a vertical axis near an interface between the single crystal and the melt, and means for centering the coracle ring within a crucible of the crystal growth apparatus, the means for centering fixedly attached to the coracle ring and resistant to attack from said melt, the means for centering being in sliding contact with the wall of the crucible so that the heat pipe coracle can float upon said melt and below an encapsulati

Abstract: A high emissivity cold cathode has alternating cylindrical tube layers, deposited by vapor deposition, of a refractory metal such as niobium and a refractory insulating material such as alumina. The metal layers have a thickness of less than or about 1,000 angstroms such that the electric field strength at the exposed end is sufficient, in combination with a low work function metal to emit electrons when a voltage of about 2,000 volts is applied.

Abstract: A static periodic field device for a free electron laser has a plurality of holes therethrough to allow the interaction of electrons flowing therethrough to interact with either an electric or a magnetic fields as desired. The device is composed of a plurality of conducting layers separated by insulating layers and appropriately connected to provide either an electric or a magnetic field therein. The separation of the conducting layers determines the raidated energy wavelength.

Abstract: A process for the high pressure synthesis of InP using an independent temperature control of a three zone furnace incorporating a heat pipe provides a stable temperature profile throughout the synthesis cycle. Internal/external pressure control of the quartz ampoule is maintained by use of a water cooled baffle and a temperature/pressure balancing program. Complete synthesis is achieved in less than five hours.

Abstract: A heat pipe ring for use in a crystal growth furnace is ring-shaped with at least one arm thereon and is constructed as one piece. An RF coil for heating a working fluid in said heat pipe is attached about said arm or an electric current can flow from one arm to an oppositely located arm to heat said body. These rings can be stacked and each may have an independently controlled sources of heat. Each heat pipe ring of the present invention has a wall of three layers of refractory material. In the case of working above 1000.degree. C., the working fluid can be lithium and the wall made of a layer of tungsten, a layer of graphite as a spacer, and a layer of silicon carbide. The internal surface on the tungsten layer is knurled to support capillary action. As a result of these features the heat pipe ring is able to survive high temperatures, greater than 1000.degree. C.

Abstract: A telescoping low vibration pulling mechanism for use in Czochralski crystal growth apparatus, comprising a broached bushing which defines an internal circumference of teeth therein, which teeth cooperate with complimentary teeth defined on the circumference of a splined shaft. The bushing is coupled to a motor drive via a hollow tube and the splined shaft, couplable to a seed shaft and an elevation assembly, telescopes through said bushing within said hollow tube.