Patents by Inventor Brian S. Mo

Brian S. Mo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7327248
    Abstract: A system for generating an e-seal for a container includes a sensor to detect a condition associated with the container and to generate a sensor reading based on the condition, and a processing device to generate the e-seal based on the sensor reading. The sensor reading may include first and second readings from the sensor, where the first reading is recorded at a first time and the second reading is recorded at a second time.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: February 5, 2008
    Assignee: SAP Aktiengesellschaft
    Inventors: Thomas Odenwald, Brian S. Mo, Asuman Suenbuel
  • Publication number: 20070283002
    Abstract: Monitor services deployable on device networks may be implemented using a modular approach, in which a core monitor service is mapped to one or more devices included in, or associated with, the device networks. Additional monitoring-related functionality may be provided to such devices using plug-ins, add-on services or service components, or other service modules, which interact with the core monitor service. The core monitor service(s) and any monitor service modules may be mapped, to specific ones of the devices, based on, for example, requirements of other services and/or relevant device metadata (e.g., capabilities) of the devices. In additional or alternative implementations, various protocols may be used to register new devices and deployed monitor service(s) with the distributed monitoring service(s) in a fast, secure, energy-efficient, and reliable manner, even as devices join or leave the device network(s).
    Type: Application
    Filed: May 31, 2006
    Publication date: December 6, 2007
    Inventors: Christof Bornhoevd, Brian S. Mo, Matthias M. Wiemann
  • Publication number: 20070282988
    Abstract: Monitor services deployable on device networks may be implemented using a modular approach, in which a core monitor service is mapped to one or more devices included in, or associated with, the device networks. Additional monitoring-related functionality may be provided to such devices using plug-ins, add-on services or service components, or other service modules, which interact with the core monitor service. The core monitor service(s) and any monitor service modules may be mapped, to specific ones of the devices, based on, for example, requirements of other services and/or relevant device metadata (e.g., capabilities) of the devices. In additional or alternative implementations, various protocols may be used to register new devices and deployed monitor service(s) with the distributed monitoring service(s) in a fast, secure, energy-efficient, and reliable manner, even as devices join or leave the device network(s).
    Type: Application
    Filed: May 31, 2006
    Publication date: December 6, 2007
    Inventors: Christof Bornhoevd, Brian S. Mo, Matthias M. Wiemann
  • Patent number: 7250855
    Abstract: Methods and apparatus, including computer program products, for processing, at a sensor node within a sensor network, a set of sensor readings to determine whether an event has occurred, the set of sensor readings including one or more sensor readings for corresponding environmental conditions. The processing includes determining whether a sensor reading exceeds its corresponding threshold value for an environmental condition, and if so, comparing the set of sensor readings with a history log file to determine whether a false alarm event has occurred. The history log file includes one or more sets of historic sensor readings for corresponding environmental conditions, each set being associated with an environmental situation.
    Type: Grant
    Filed: December 27, 2004
    Date of Patent: July 31, 2007
    Assignee: SAP Aktiengesellschaft
    Inventors: Asuman Suenbuel, Thomas Odenwald, Brian S. Mo
  • Patent number: 7250862
    Abstract: Systems, methods and computer program products, implementing techniques for automatic data acquisition and the real-time display of automatically acquired data. A system implementing the techniques includes one or more automatic data acquisition devices that emit data; and a data integration system that receives data from the automatic data acquisition devices and processes the data. The data integration system includes a display system for displaying the data to a user. The display system is operable to generate a graphical display and to update the graphical display automatically and only when new data from the automatic data acquisition devices is available. The display system is operable to update only affected parts of the graphical display but not necessarily the entire display.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: July 31, 2007
    Assignee: Sap Aktiengesellschaft
    Inventors: Christof Bornhoevd, Rama Gurram, Brian S. Mo
  • Patent number: 6901304
    Abstract: Methods and apparatus, including computer program products, for providing multiple enterprises real-time access to information about items in a supply chain. Tags bound to items are read and information read from the tags and location information about the tags is provided by at least two enterprises and used to maintain disposition information about the items, which is made visible to enterprises in the supply chain. The tags can be radio-frequency identification tags having each having an ePC (electronic product code) as unique tag identifier. Visibility of the disposition information can be controlled through authorization. Visible information can include relationships between particular items and business documents such as order and shipping documents. With shipping documents visible, information read from item tags can be used to confirm the identify or completeness of a shipment.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: May 31, 2005
    Assignee: SAP Aktiengesellschaft
    Inventors: Richard J. Swan, Peter S. Ebert, Tao Lin, Jie Weng, Hartmut K. Vogler, Brian S. Mo
  • Patent number: 6737323
    Abstract: A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.
    Type: Grant
    Filed: June 11, 2001
    Date of Patent: May 18, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventor: Brian S. Mo
  • Publication number: 20030227392
    Abstract: Methods and apparatus, including computer program products, for real-time and context-aware tracking of items. Tags bound to items are read and information read from the tags and location information about the tags is provided by at least two enterprises and used to maintain disposition information about the items, which is made visible to enterprises in the supply chain. The disposition information can be mapped to a world model that tracks the items and circumstances affecting the items, for example, geo-spatial events and traffic delays. Visibility of the disposition information can be controlled through authorization. Visible information can include relationships between particular items and business documents such as order and shipping documents.
    Type: Application
    Filed: January 10, 2003
    Publication date: December 11, 2003
    Inventors: Peter S. Ebert, Richard J. Swan, Tao Lin, Jie Weng, Hartmut K. Vogler, Brian S. Mo, Stephan Haller
  • Patent number: 6638824
    Abstract: A double-diffused metal-oxide-semiconductor (“DMOS”) field-effect transistor (10) with a metal gate (26). A sacrificial gate layer is patterned to provide a self-aligned source mask. The source regions (20) are thus aligned to the gate (26), and the source diffusion provides a slight overlap (28) for good turn-on characteristics and low leakage. The sacrificial gate layer is capable of withstanding the diffusion temperatures of the DMOS process and is selectively etchable. After the high-temperature processing is completed, the sacrificial gate layer is stripped and a metal gate layer is formed over the substrate, filling the volume left by the stripped sacrificial gate material. In one embodiment, a chemical-mechanical polishing technique is used to planarize the metal gate layer.
    Type: Grant
    Filed: January 11, 2002
    Date of Patent: October 28, 2003
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Duc Q. Chau, Brian S. Mo
  • Publication number: 20030132854
    Abstract: Methods and apparatus, including computer program products, for providing multiple enterprises real-time access to information about items in a supply chain. Tags bound to items are read and information read from the tags and location information about the tags is provided by at least two enterprises and used to maintain disposition information about the items, which is made visible to enterprises in the supply chain. The tags can be radio-frequency identification tags having each having an ePC (electronic product code) as unique tag identifier. Visibility of the disposition information can be controlled through authorization. Visible information can include relationships between particular items and business documents such as order and shipping documents. With shipping documents visible, information read from item tags can be used to confirm the identify or completeness of a shipment.
    Type: Application
    Filed: August 30, 2002
    Publication date: July 17, 2003
    Inventors: Richard J. Swan, Peter S. Ebert, Tao Lin, Jie Weng, Hartmut K. Vogler, Brian S. Mo
  • Publication number: 20020084486
    Abstract: A double-diffused metal-oxide-semiconductor (“DMOS”) field-effect transistor (10) with a metal gate (26). A sacrificial gate layer is patterned to provide a self-aligned source mask. The source regions (20) are thus aligned to the gate (26), and the source diffusion provides a slight overlap (28) for good turn-on characteristics and low leakage. The sacrificial gate layer is capable of withstanding the diffusion temperatures of the DMOS process and is selectively etchable. After the high-temperature processing is completed, the sacrificial gate layer is stripped and a metal gate layer is formed over the substrate, filling the volume left by the stripped sacrificial gate material. In one embodiment, a chemical-mechanical polishing technique is used to planarize the metal gate layer.
    Type: Application
    Filed: January 11, 2002
    Publication date: July 4, 2002
    Applicant: Fairchild Semiconductor Corporation
    Inventors: Duc Q. Chau, Brian S. Mo
  • Publication number: 20020024091
    Abstract: A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.
    Type: Application
    Filed: June 11, 2001
    Publication date: February 28, 2002
    Inventor: Brian S. Mo
  • Patent number: 6274905
    Abstract: A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the dielectric material and provides buffering for stress relief. The trench is then filled substantially with refractory metal such as tungsten.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: August 14, 2001
    Assignee: Fairchild Semiconductor Corporation
    Inventor: Brian S. Mo