Abstract: A device includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface generally promotes resist coverage on the wafer surface, including corners (e.g., junctions between the wafer surface and various surface topographies, such as cavities, the recessed surface, and so forth) on the wafer. In one or more implementations, a wet etching procedure is used to form the sidewalls and recessed surface. A resist material (e.g., a photoresist material) is deposited onto the wafer surface, where the photoresist fully covers one or more of the top corners of the wafer surface. In one or more implementations, the recessed surface is positioned adjacent a trench formed in the wafer to promote resist coverage on the top surface of the wafer.

Abstract: A device includes sidewalls formed in a wafer surface, where the sidewalls descend to a recessed surface. The recessed surface generally promotes resist coverage on the wafer surface, including corners (e.g., junctions between the wafer surface and various surface topographies, such as cavities, the recessed surface, and so forth) on the wafer. In one or more implementations, a wet etching procedure is used to form the sidewalls and recessed surface. A resist material (e.g., a photoresist material) is deposited onto the wafer surface, where the photoresist fully covers one or more of the top corners of the wafer surface. In one or more implementations, the recessed surface is positioned adjacent a trench formed in the wafer to promote resist coverage on the top surface of the wafer.