Patents by Inventor Brian Saxton UNDERWOOD
Brian Saxton UNDERWOOD has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10790139Abstract: A silicon and oxygen-containing film, such as a silicon dioxide film, is deposited in the absence of an oxidizer by introducing siloxane precursors into a plasma processing chamber and dissociating at least some of the Si—H bonds of the siloxane precursors by, for example, exposing the siloxane precursors to a low energy plasma. The silicon and oxygen-containing film may be formed on an oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and oxygen-containing film may serve as an initiation layer for a silicon dioxide bulk layer that is formed on top of the initiation layer using conventional silicon oxide deposition techniques, such as exposing the siloxane precursors to an oxygen-containing plasma. The initiation layer may be post-treated or cured to reduce the concentration of Si—H bonds prior to or after the deposition of the bulk layer.Type: GrantFiled: January 5, 2015Date of Patent: September 29, 2020Assignee: Applied Materials, Inc.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick
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Patent number: 10460936Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.Type: GrantFiled: October 16, 2017Date of Patent: October 29, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick, Mukund Srinivasan, Juan Carlos Rocha-Alvarez
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Patent number: 9947576Abstract: Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even at the bottom of the film due to the significant penetration prior to reaction. The treatment may reduce shrinkage at the bottom of a trench filled with the porous film.Type: GrantFiled: July 13, 2015Date of Patent: April 17, 2018Assignee: Applied Materials, Inc.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick
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Publication number: 20180040473Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.Type: ApplicationFiled: October 16, 2017Publication date: February 8, 2018Inventors: Brian Saxton UNDERWOOD, Abhijit Basu MALLICK, Mukund SRINIVASAN, Juan Carlos ROCHA-ALVAREZ
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Publication number: 20170018455Abstract: Methods are described for reducing shrinkage experienced by porous films on a patterned substrate. The film may be a silicon-and-hydrogen-containing layer which further contains one or two of carbon, oxygen and nitrogen. Shortly after deposition, the silicon-and-hydrogen-containing layer is treated by concurrent exposure to a relatively small molecule precursor (e.g. NH3 or C2H2) and a source of UV light. The treatment may reduce subsequent shrinkage experienced by the porous film even at the bottom of the film due to the significant penetration prior to reaction. The treatment may reduce shrinkage at the bottom of a trench filled with the porous film which provides the benefit of maintaining a greater filling factor within the trench after processing is completed.Type: ApplicationFiled: July 13, 2015Publication date: January 19, 2017Applicant: APPLIED MATERIALS, INC.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick
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Publication number: 20160336174Abstract: A silicon and oxygen-containing film, such as a silicon dioxide film, is deposited in the absence of an oxidizer by introducing siloxane precursors into a plasma processing chamber and dissociating at least some of the Si—H bonds of the siloxane precursors by, for example, exposing the siloxane precursors to a low energy plasma. The silicon and oxygen-containing film may be formed on an oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and oxygen-containing film may serve as an initiation layer for a silicon dioxide bulk layer that is formed on top of the initiation layer using conventional silicon oxide deposition techniques, such as exposing the siloxane precursors to an oxygen-containing plasma. The initiation layer may be post-treated or cured to reduce the concentration of Si—H bonds prior to or after the deposition of the bulk layer.Type: ApplicationFiled: January 5, 2015Publication date: November 17, 2016Applicant: Applied Materials, Inc.Inventors: Brian Saxton UNDERWOOD, Abhijit Basu MALLICK
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Patent number: 9343293Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.Type: GrantFiled: July 3, 2013Date of Patent: May 17, 2016Assignee: Applied Materials, Inc.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick, Nitin K. Ingle
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Publication number: 20150200094Abstract: Methods are described for treating a carbon film on a semiconductor substrate. The carbon may have a high content of sp3 bonding to increase etch resistance and enable new applications as a hard mask. The carbon film may be referred to as diamond-like carbon before and even after treatment. The purpose of the treatment is to reduce the typically high stress of the deposited carbon film without sacrificing etch resistance. The treatment involves ion bombardment using plasma effluents formed from a local capacitive plasma. The local plasma is formed from one or more of inert gases, carbon-and-hydrogen precursors and/or nitrogen-containing precursors.Type: ApplicationFiled: January 10, 2014Publication date: July 16, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick
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Publication number: 20150187563Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.Type: ApplicationFiled: December 23, 2014Publication date: July 2, 2015Inventors: BRIAN SAXTON UNDERWOOD, Abhijit Basu Mallick, Mukund Srinivasan, Juan Carlos Rocha-Alvarez
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Patent number: 8986557Abstract: Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate.Type: GrantFiled: February 11, 2014Date of Patent: March 24, 2015Assignee: Applied Materials, Inc.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick, Nitin Ingle, Roman Gouk, Steven Verhaverbeke
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Publication number: 20140302688Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react in to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.Type: ApplicationFiled: July 3, 2013Publication date: October 9, 2014Applicant: Applied Materials, Inc.Inventors: Brian Saxton Underwood, Abhijit Basu Mallick, Nitin K. Ingle
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Publication number: 20140231384Abstract: Method and apparatus for forming a patterned magnetic substrate are provided. A patterned resist is formed on a magnetically active surface of a substrate. An oxide layer is formed over the patterned resist by a flowable CVD process. The oxide layer is etched to expose portions of the patterned resist. The patterned resist is then etched, using the etched oxide layer as a mask, to expose portions of the magnetically active surface. A magnetic property of the exposed portions of the magnetically active surface is then modified by directing energy through the etched resist layer and the etched oxide layer, which are subsequently removed from the substrate.Type: ApplicationFiled: February 11, 2014Publication date: August 21, 2014Inventors: Brian Saxton UNDERWOOD, Abhijit Basu MALLICK, Nitin INGLE, Roman GOUK, Steven VERHAVERBEKE