Abstract: A method for etching features into a substrate by removing substrate material from selected areas while leaving the substrate substantially unaffected in other areas is provided including the steps of providing the substrate to be etched into a process chamber, providing a patterned mask on the substrate as a guide for selective removal of the substrate, the substrate having a mask area and mask-free area, introducing a chemical species of halogenated heterocylic hydrocarbons into the process chamber, applying excitation energy to the process chamber to cause the chemical species to dissociate and form reactive ions and neutral species, and maintaining an electric potential gradient in an area adjacent the substrate to impose directionality and anisotropy to the etch.

Abstract: A method for etching features into a substrate by removing substrate material from selected areas while leaving the substrate substantially unaffected in other areas is provided including the steps of providing the substrate to be etched into a process chamber, providing a patterned mask on the substrate as a guide for selective removal of the substrate, the substrate having a mask area and mask-free area, introducing a chemical species of halogenated heterocylic hydrocarbons into the process chamber, applying excitation energy to the process chamber to cause the chemical species to dissociate and form reactive ions and neutral species, and maintaining an electric potential gradient in an area adjacent the substrate to impose directionality and anisotropy to the etch.