Patents by Inventor Brian T. Kearney

Brian T. Kearney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High temperature sputtered stoichiometric titanium nitride thin films
    Patent number: 11072848
    Abstract: A method for producing high-temperature sputtered stoichiometric TiN thin films. A substrate is placed in a sputtering chamber a Ti target to be sputtered and the substrate temperature is controlled to be between room temperature and about 800° C. The sputtering chamber is evacuated to a base pressure of 2×10?7 Torr or lower, The Ti target is presputtered under an Ar gas flow at a pressure of 2-15 mTorr in a radio frequency (RF) power of 50-200 W. The Ti is then sputtered onto the substrate in the presence of N2 and Ar gas flows under the same pressure and RF power, with the ratio of N2 to Ar favoring N to ensure that the film is nitrogen-saturated.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: July 27, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Battogtokh Jugdersuren, Brian T. Kearney
  • High Temperature Sputtered Stoichiometric Titanium Nitride Thin Films
    Publication number: 20190276925
    Abstract: A method for producing high-temperature sputtered stoichiometric TiN thin films. A substrate is placed in a sputtering chamber a Ti target to be sputtered and the substrate temperature is controlled to be between room temperature and about 800° C. The sputtering chamber is evacuated to a base pressure of 2×10?7 Torr or lower, The Ti target is presputtered under an Ar gas flow at a pressure of 2-15 mTorr in a radio frequency (RF) power of 50-200 W. The Ti is then sputtered onto the substrate in the presence of N2 and Ar gas flows under the same pressure and RF power, with the ratio of N2 to Ar favoring N to ensure that the film is nitrogen-saturated.
    Type: Application
    Filed: January 22, 2019
    Publication date: September 12, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Xiao Liu, Battogtokh Jugdersuren, Brian T. Kearney