Abstract: A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.

Abstract: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.

Abstract: A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.

Abstract: A logical channel is configured to match a modulation profile of an active channel. A network element is assigned to the logical channel and a ping request is sent to the network element. A response from the network element is measured, such as measuring the MER. The modulation profile is increased in the logical channel and another ping request is sent to the network element. The response is measured again, and the process is repeated until a non-linearity is detected in the response. The acceptable modulation profiles are indicated before the non-linearity is detected in the response.

Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light.

Abstract: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.

Abstract: A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.

Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.

Abstract: Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region.

Abstract: A logical channel is configured to match a modulation profile of an active channel. A network element is assigned to the logical channel and a ping request is sent to the network element. A response from the network element is measured, such as measuring the MER. The modulation profile is increased in the logical channel and another ping request is sent to the network element. The response is measured again, and the process is repeated until a non-linearity is detected in the response. The acceptable modulation profiles are indicated before the non-linearity is detected in the response.

Abstract: Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region.

Abstract: A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.

Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.

Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light.

Abstract: A spare receiver in a CMTS is used to non-invasively test the signal quality of an original channel frequency of a receiver which has been tuned to another channel frequency so the operator can retune the receiver to its original channel frequency without disrupting subscriber operations. The spare receiver is RF connected to the receiver and performs RSSI testing on the channel frequency. If the channel frequency is sufficiently noise free, a modem is registered on the spare receiver as a testing modem. The testing modem is used to test the signal quality of the network, such as by using a SNR test. When the original channel frequency is determined to have a sufficient SNR value, the receiver is retuned to its original channel frequency.

Abstract: A spare receiver in a CMTS is used to non-invasively test the upstream signal quality of a network without disrupting a subscriber's operations. A modem registered with a receiver on the network is selected as a testing modem. The spare receiver is RF connected to the receiver and the testing modem is tuned to the spare receiver. The testing modem is used to test the signal quality of the network, such as by using a SNR test. The testing modem remains registered with the network during the testing operation. Other modems are prevented from registering with the spare receiver. If other modems attempt to register on the spare receiver, the system overrides their attempts and moves them back to another receiver. The testing modem is returned to its original receiver when testing is completed.

Abstract: A spare receiver in a CMTS is used to prevent loss of service to subscribers during a failure of a receiver. The beginning of a mass modem de-registration event is detected by the operator or automatically by the CMTS. Upon detection of the beginning of the mass modem de-registration event, the spare receiver matrices to the troubled receiver and is configured according the communication parameters of the troubled receiver. The spare receiver sends communications to one or modems normally registered with the troubled receiver to determine if the mass de-registration event is the result of a failed receiver or a connection problem. In the event of a failed receiver, the spare receiver stays matriced with the troubled receiver and passes communications to/from from modems normally registered with it. The cable operator may swap out the troubled receiver and repair the system without significant loss of service to the subscribers.

Abstract: A spare receiver in a CMTS is used to determine the RF connectivity status of the receivers of a Load Balancing Group or Spectrum Group in the CMTS in the network. The spare receiver is connected to a receiver of the Load Balancing Group or Spectrum Group which does not have modems registered. The spare receiver is also configured to have the communication protocols of another selected receiver of the Load Balancing Group or Spectrum Group which does have modems registered. A transmitter sends a request for a response to a modem registered with the selected receiver. If the spare receiver, which is configured to have the same communication protocols as the selected receiver, receives the response from the modem, the unregistered receiver under test is determined to have sufficient RF connectivity to be included in Load Balancing operations. Each unregistered receiver in the Load Balancing Group or Spectrum Group is analyzed in the same manner.

Abstract: A spare receiver in a CMTS is used to determine the connectivity status of the receivers of the CMTS in the network. Load balancing and Spectrum Groups may also be determined according to the connectivity status of the receivers. The spare receiver is configured to have the communication protocols of a first selected receiver of the CMTS and is switched to be connected to the signal lines of another receiver of the CMTS. A transmitter sends a request for a response to a modem registered with the first receiver. If the spare receiver, which is configured to have the same communication protocols as the first receiver of the CMTS, receives the response from the modem, the other receiver under test is determined to be physically wired with the first receiver. The other receiver is also determined to be in the same Load Balancing Group and the same Spectrum Group as the first receiver of the CMTS.

Abstract: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light.