Abstract: An integrated circuit comprises a substrate composed of crystalline semiconductor. An optoelectronic device is formed at the substrate and includes a plurality of transducers. A thin-film semiconductor layer is situated over the optical device, and circuitry is formed at the thin-film semiconductor layer. The circuitry may include a plurality of transistors electrically coupled to the optoelectronic device by a set of layer interconnects.

Abstract: Addressing an emissive display having pixels arranged into rows and columns. A first clock signal is received at an address select input of a first row of the display. Data signals are received at data signal inputs of the first row of the display, each of the received data signals corresponding to a column of the display. When the first clock signal is active at the address select input, the data signals are output to corresponding drivers of light emitting semi-conductors of the first row and via corresponding data signal outputs of the first row. The data signals are received from the data signal outputs of the first row at a first row of shift registers. A second clock signal is received at the first row of shift registers. When the second clock signal is active, the data signals are output from the first row of shift registers.

Abstract: This invention relates to the fabrication of semiconductor devices using released elements of a semiconductor material (chiplets) which are co-integrated with thin film transistors to implement addressing, switching, amplification, memory, low voltage logic, or other electronic functionality. These chiplets are released from their initial substrate and distributed across a larger area to form a complete system as part of the manufacturing process of a final system.

Abstract: A system and method of are described related to structures that enable or facilitate improvement of micro-LED elements including contact, attachment, and integration of optical components. Implementations may benefit color conversion and optimization, light extraction angle, extraction efficiency, and contact reliability.

Abstract: Addressing an emissive display having pixels arranged into rows and columns. A first clock signal is received at an address select input of a first row of the display. Data signals are received at data signal inputs of the first row of the display, each of the received data signals corresponding to a column of the display. When the first clock signal is active at the address select input, the data signals are output to corresponding drivers of light emitting semi-conductors of the first row and via corresponding data signal outputs of the first row. The data signals are received from the data signal outputs of the first row at a first row of shift registers. A second clock signal is received at the first row of shift registers. When the second clock signal is active, the data signals are output from the first row of shift registers.

Abstract: LED structures (e.g., LED arrays) and fabrication methods can reduce or even eliminate deep etching, and associated defect formation, proximate sites of individual LEDs. Such approaches can achieve desired electrical isolation without deep etching, provide a high conductivity current spreading layer, and, or reduce losses otherwise associated with conventional fabrication approaches. Some implementations advantageously lift off or separate an insulating substrate from a wafer to expose a bottom surface of the epitaxial LED layer and forms a backside contact (e.g., ground plane) overlying the bottom surface. Other implementations isolate deep etching away from sensitive regions and locate the backside contact on a top surface of the epitaxial LED layer. Some implementations form light extraction features (e.g., photonic crystals) on the exposed bottom surface. The top surface of the epitaxial LED layer may be undoped to improve electrical isolation.

Abstract: LED structures (e.g., LED arrays) and fabrication methods can reduce or even eliminate deep etching, and associated defect formation, proximate sites of individual LEDs. Such approaches can achieve desired electrical isolation without deep etching, provide a high conductivity current spreading layer, and, or reduce losses otherwise associated with conventional fabrication approaches. Some implementations advantageously lift off or separate an insulating substrate from a wafer to expose a bottom surface of the epitaxial LED layer and forms a backside contact (e.g., ground plane) overlying the bottom surface. Other implementations isolate deep etching away from sensitive regions and locate the backside contact on a top surface of the epitaxial LED layer. Some implementations form light extraction features (e.g., photonic crystals) on the exposed bottom surface. The top surface of the epitaxial LED layer may be un-doped to improve electrical isolation.

Abstract: LED structures (e.g., LED arrays) and fabrication methods can reduce or even eliminate deep etching, and associated defect formation, proximate sites of individual LEDs. Such approaches can achieve desired electrical isolation without deep etching, provide a high conductivity current spreading layer, and, or reduce losses otherwise associated with conventional fabrication approaches. Some implementations advantageously lift off or separate an insulating substrate from a wafer to expose a bottom surface of the epitaxial LED layer and forms a backside contact (e.g., ground plane) overlying the bottom surface. Other implementations isolate deep etching away from sensitive regions and locate the backside contact on a top surface of the epitaxial LED layer. Some implementations form light extraction features (e.g., photonic crystals) on the exposed bottom surface. The top surface of the epitaxial LED layer may be undoped to improve electrical isolation.

Abstract: LED structures (e.g., LED arrays) and fabrication methods can reduce or even eliminate deep etching, and associated defect formation, proximate sites of individual LEDs. Such approaches can achieve desired electrical isolation without deep etching, provide a high conductivity current spreading layer, and, or reduce losses otherwise associated with conventional fabrication approaches. Some implementations advantageously lift off or separate an insulating substrate from a wafer to expose a bottom surface of the epitaxial LED layer and forms a backside contact (e.g., ground plane) overlying the bottom surface. Other implementations isolate deep etching away from sensitive regions and locate the backside contact on a top surface of the epitaxial LED layer. Some implementations form light extraction features (e.g., photonic crystals) on the exposed bottom surface. The top surface of the epitaxial LED layer may be undoped to improve electrical isolation.

Abstract: An aqueous-based coolant for cooling and reducing corrosion potential in applications having high aluminum or nickel surface area to coolant volume ratios has a pH between 8 and 9 and includes about 35 weight % to about 65 weight % propylene glycol, about 1.0 weight % to about 4.0 weight % 2-ethylhexanoic acid, about 0.25 weight % to about 1.0 weight % sebacic acid, about 0.25 weight % to about 1.0 weight % benzoic acid and about 0.03 weight % to about 0.1 weight % molybdate oxyanion. A cooling system includes an aluminum or nickel surface and the aqueous-based coolant. A method of cooling a component surface containing aluminum or nickel includes delivering the aqueous-based coolant to the component surface and cooling the component surface with the aqueous-based coolant.

Abstract: An aqueous-based coolant for cooling and reducing corrosion potential in applications having high aluminum or nickel surface area to coolant volume ratios has a pH between 8 and 9 and includes about 35 weight % to about 65 weight % propylene glycol, about 1.0 weight % to about 4.0 weight % 2-ethylhexanoic acid, about 0.25 weight % to about 1.0 weight % sebacic acid, about 0.25 weight % to about 1.0 weight % benzoic acid and about 0.03 weight % to about 0.1 weight % molybdate oxyanion. A cooling system includes an aluminum or nickel surface and the aqueous-based coolant. A method of cooling a component surface containing aluminum or nickel includes delivering the aqueous-based coolant to the component surface and cooling the component surface with the aqueous-based coolant.