Abstract: In various implementations, beta-hydroxybutyrate, related compounds, and/or one or more other compounds may be administered to an individual to cause weight loss, weight maintenance, elevate blood ketone levels, maintain blood ketone levels, reduce blood glucose levels, maintain blood glucose levels, improve energy, focus, mood, cognitive function, or aide with neurological or inflammatory disorders and/or combinations thereof. Other compounds may include short chain fatty acids, short chain triglycerides, medium chain fatty acids, medium chain triglycerides, long chain fatty acids, long chain triglycerides, berberine, metabolites of berberine (e.g., dihydroberberine), and/or combinations thereof.

Abstract: In various implementations, berberine metabolites, such as dihydroberberine and/or tetrahydroberberine, may be administered to manage blood glucose levels, increase ketone levels (e.g., blood concentration of ketones), and/or for therapeutic purposes in humans. The administration of a pharmaceutically effective amount of berberine metabolites, such as dihydroberberine, may reduce fasting blood glucose levels, improve glucose tolerance, and/or improve blood ketone response. In some implementations, berberine metabolites may be administered with one or more other compounds.

Abstract: One or more servers perform functions that include: maintaining a database including information relating to facilities that are subject to a first entity, the facilities being dispersed geographically, the information including geographic locations for at least some of the facilities; receiving a first message from a facility for which information is in the database, the first message identifying a fixture of the facility that requires attention, where information in the database for the facility identifies the fixture by at least one of a designation of the fixture and a characteristic of the fixture; sending a second message to a second entity that has contracted with the first entity to provide service within a geographic location of the facility; and enabling the second entity to access the database to identify the fixture.

Abstract: One or more servers perform functions that include: maintaining a database including information relating to facilities that are subject to a first entity, the facilities being dispersed geographically, the information including geographic locations for at least some of the facilities; receiving a first message from a facility for which information is in the database, the first message identifying a fixture of the facility that requires attention, where information in the database for the facility identifies the fixture by at least one of a designation of the fixture and a characteristic of the fixture; sending a second message to a second entity that has contracted with the first entity to provide service within a geographic location of the facility; and enabling the second entity to access the database to identify the fixture.

Abstract: One or more servers perform functions that include: maintaining a database including information relating to facilities that are subject to a first entity, the facilities being dispersed geographically, the information including geographic locations for at least some of the facilities; receiving a first message from a facility for which information is in the database, the first message identifying a fixture of the facility that requires attention, where information in the database for the facility identifies the fixture by at least one of a designation of the fixture and a characteristic of the fixture; sending a second message to a second entity that has contracted with the first entity to provide service within a geographic location of the facility; and enabling the second entity to access the database to identify the fixture.

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract: Molecular layer deposition of silicon carbide is described. A deposition precursor includes a precursor molecule which contains silicon, carbon and hydrogen. Exposure of a surface to the precursor molecule results in self-limited growth of a single layer. Though the growth is self-limited, the thickness deposited during each cycle of molecular layer deposition involves multiple “atomic” layers and so each cycle may deposit thicknesses greater than typically found during atomic layer depositions. Precursor effluents are removed from the substrate processing region and then the surface is irradiated before exposing the layer to the deposition precursor again.

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract: Molecular layer deposition of silicon carbide is described. A deposition precursor includes a precursor molecule which contains silicon, carbon and hydrogen. Exposure of a surface to the precursor molecule results in self-limited growth of a single layer. Though the growth is self-limited, the thickness deposited during each cycle of molecular layer deposition involves multiple “atomic” layers and so each cycle may deposit thicknesses greater than typically found during atomic layer depositions. Precursor effluents are removed from the substrate processing region and then the surface is irradiated before exposing the layer to the deposition precursor again.

Abstract: One or more servers perform functions that include: maintaining a database including information relating to facilities that are subject to a first entity, the facilities being dispersed geographically, the information including geographic locations for at least some of the facilities; receiving a first message from a facility for which information is in the database, the first message identifying a fixture of the facility that requires attention, where information in the database for the facility identifies the fixture by at least one of a designation of the fixture and a characteristic of the fixture; sending a second message to a second entity that has contracted with the first entity to provide service within a geographic location of the facility; and enabling the second entity to access the database to identify the fixture.