Abstract: A sensor supported by a head transducer has a temperature coefficient of resistance (TCR) and a sensor resistance. The sensor operates at a temperature above ambient and is responsive to changes in sensor-medium spacing. Conductive contacts connected to the sensor have a contact resistance and a cross-sectional area adjacent to the sensor larger than that of the sensor, such that the contact resistance is small relative to the sensor resistance and negligibly contributes to a signal generated by the sensor. A multiplicity of head transducers each support a TCR sensor and a power source can supply bias power to each sensor of each head to maintain each sensor at a fixed temperature above an ambient temperature in the presence of heat transfer changes impacting the sensors. A TCR sensor of a head transducer can include a track-oriented TCR sensor wire for sensing one or both of asperities of the medium.

Abstract: A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer.

Abstract: A sensor supported by a head transducer has a temperature coefficient of resistance (TCR) and a sensor resistance. The sensor operates at a temperature above ambient and is responsive to changes in sensor-medium spacing. Conductive contacts connected to the sensor have a contact resistance and a cross-sectional area adjacent to the sensor larger than that of the sensor, such that the contact resistance is small relative to the sensor resistance and negligibly contributes to a signal generated by the sensor. A multiplicity of head transducers each support a TCR sensor and a power source can supply bias power to each sensor of each head to maintain each sensor at a fixed temperature above an ambient temperature in the presence of heat transfer changes impacting the sensors. A TCR sensor of a head transducer can include a track-oriented TCR sensor wire for sensing one or both of asperities of the medium.

Abstract: Recording heads for a data storage system include a first side having at least a portion of a metal component. A carbon overcoat is on the first side and covers the at least a portion of a metal component. A corrosion inhibitor is incorporated in the carbon overcoat. The corrosion inhibitor is illustratively located between the carbon overcoat and the at least a portion of a metal component, on top of the carbon overcoat, or within the carbon overcoat. In an embodiment, the carbon overcoat includes diamond-like carbon.

Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 ?·?m2.

Abstract: Recording heads for a data storage system include a first side having at least a portion of a metal component. A carbon overcoat is on the first side and covers the at least a portion of a metal component. A corrosion inhibitor is incorporated in the carbon overcoat. The corrosion inhibitor is illustratively located between the carbon overcoat and the at least a portion of a metal component, on top of the carbon overcoat, or within the carbon overcoat. In an embodiment, the carbon overcoat includes diamond-like carbon.

Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 ?·?m2.

Abstract: A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 ?·?m2.

Abstract: A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer.

Abstract: A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10?3.

Abstract: The present invention is a tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode, wherein a sense current flows substantially perpendicular to a longitudinal plane of the barrier layer. The TMR stack has a plurality of layers including a barrier layer. The barrier layer may made of titanium and may be oxidized with an aggressive oxidation method, such as with UV illumination, for a predetermined time period. The barrier layer may be formed on a first ferromagnetic layer before oxidation, and then a second ferromagnetic layer may be formed on the oxidized barrier layer. The TMR stack exhibits an increased magnetoresistive (MR) ratio, a lower RA product, a higher breakdown voltage of the TMR stack, and greater thermal stability.

Abstract: A multilayer coating of fullerene molecules is deposited on a substrate, and layers of the multilayer coating are removed leaving an approximate monolayer coating of fullerene molecules on the substrate. In some embodiments, a beam generator, such as an ion beam, electron beam or laser generator, produces a beam arranged to break the weaker fullerene-to-fullerene intermolecular bond of the multilayer coating and inadequate to break the stronger fullerene-to-substrate association/bond of the coating. The beam is directed at the multilayer coating to break the fullerene-to-fullerene intermolecular bond. In other embodiments, the monolayer of fullerene molecules is formed by applying a solvent to the multilayer coating to break the fullerene-to-fullerene intermolecular bond of the multilayer coating.

Abstract: A photolithography reticle for use in conjunction with an exposure tool to produce a tapered sidewall profile in photoresist includes a solid portion and multiple sub-resolution line portions. The solid portion has a width which is greater than a resolution of the exposure tool. The sub-resolution line portions have widths which are less than the resolution of the exposure tool. Each of the sub-resolution line portions is spaced apart from the solid portion and from the others of the plurality of sub-resolution line portions by less than the resolution of the exposure tool.

Abstract: A disc drive slider includes a slider body and a rail formed on the slider body. The rail includes a bearing surface which faces a surface of a disc. A textured portion is formed on the bearing surface of the rail. Pads are deposited on the textured portions. The pads operate to reduce stiction, dynamic friction, and the likelihood of damage to the slider or the surface of the disc due to contact therebetween.

Abstract: A disc drive slider includes a slider body and a rail formed on the slider body. The rail includes a bearing surface which faces a surface of a disc. A textured portion is formed on the bearing surface of the rail. Pads are deposited on the textured portions. The pads operate to reduce stiction, dynamic friction, and the likelihood of damage to the slider or the surface of the disc due to contact therebetween.

Abstract: A multilayer coating of fullerene molecules is deposited on a substrate, and layers of the multilayer coating are removed leaving an approximate monolayer coating of fullerene molecules on the substrate. In some embodiments, a beam generator, such as an ion beam, electron beam or laser generator, produces a beam arranged to break the weaker fullerene-to-fullerene intermolecular bond of the multilayer coating and inadequate to break the stronger fullerene-to-substrate association/bond of the coating. The beam is directed at the multilayer coating to break the fullerene-to-fullerene intermolecular bond. In other embodiments, the monolayer of fullerene molecules is formed by applying a solvent to the multilayer coating to break the fullerene-to-fullerene intermolecular bond of the multilayer coating.