Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.

Abstract: A semi-transparent photovoltaic module comprises a basic 2D pattern representing an arrangement of an electrically conductive zone and electrically non-conductive zones such that any point in the electrically conductive zone is electrically connected to any other point of the zone and the electrically conductive zone is a regular or pseudo-regular structure formed by an elementary geometrical figure. The module additionally comprises one or more active isolation lines and a plurality of non-functional isolation lines that are mutually parallel.

Abstract: A method for optimizing the electrical performance of all or part of a photovoltaic module (11) through breakdown at the metal/oxide/metal interface. The method may include: —Step 1: Illuminating all or part of said photovoltaic module with a luminous flux controlled by a control module (14); —Step 2: Reverse-biasing said photovoltaic module: by subjecting it to a voltage sweep ranging from ?Voc/2, Voc being the open-circuit voltage, to a limit bias voltage VL whose value depends on the mode of interconnection and on the number (NB) of cells forming all or part of said photovoltaic module.

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.

Abstract: A semitransparent photovoltaic device comprising: a plurality of active photovoltaic areas including a transparent substrate, a front electrode, an absorber including one or more thin photoactive layers, and a rear electrode; a transparency area separating at least two of the active photovoltaic areas; and a collection grid. The collection grid includes a metallic contact layer and a plurality of VIAs between the front electrode and the metallic contact layer, wherein the VIAs are randomly distributed within the active photovoltaic area.

Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.

Abstract: Methods of operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

Abstract: A coded-light communication device is described, in which the communication has an initial signal-to-noise ratio, which varies according to the lighting conditions. The device comprises at least one photodetector-type light receiver comprising an anode and a cathode and having an initial shunt resistance. The receiver is capable of being simultaneously exposed to a coded light source carrying a signal and a non-coded light source. The anode and cathode are short-circuited by at least one short-circuit resistance arranged inside the photodetector, having a value selected so that the new value of the shunt resistance of the photodetector resulting from the connection of the initial shunt resistance and the short-circuit resistance gives the communication device a new resultant signal-to-noise ratio which remains substantially independent of the intensity of the non-coded light.

Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.

Abstract: A coded-light communication device is described, in which the communication has an initial signal-to-noise ratio, which varies according to the lighting conditions. The device comprises at least one photodetector-type light receiver comprising an anode and a cathode and having an initial shunt resistance. The receiver is capable of being simultaneously exposed to a coded light source carrying a signal and a non-coded light source. The anode and cathode are short-circuited by at least one short-circuit resistance arranged inside the photodetector, having a value selected so that the new value of the shunt resistance of the photodetector resulting from the connection of the initial shunt resistance and the short-circuit resistance gives the communication device a new resultant signal-to-noise ratio which remains substantially independent of the intensity of the non-coded light.

Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.

Abstract: An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

Abstract: A device includes a thermally deformable assembly accommodated in a cavity of the interconnection part of an integrated circuit. The assembly can bend when there is a variation in temperature, so that its free end zone is displaced vertically. The assembly can be formed in the back end of line of the integrated circuit.

Abstract: An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.