Patents by Inventor Brigitte C. Stoehr
Brigitte C. Stoehr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7371485Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.Type: GrantFiled: October 31, 2005Date of Patent: May 13, 2008Assignee: Applied Materials, Inc.Inventors: Cynthia B. Brooks, Melisa J. Buie, Brigitte C. Stoehr
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Patent number: 7115523Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.Type: GrantFiled: March 18, 2003Date of Patent: October 3, 2006Assignee: Applied Materials, Inc.Inventors: Brigitte C. Stoehr, Michael D. Welch, Melisa J. Buie
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Patent number: 7018934Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, (iii) another chlorine containing gas, and optionally, (iv) an inert gas into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch exposed portions of the metal layer disposed on the substrate.Type: GrantFiled: September 4, 2002Date of Patent: March 28, 2006Assignee: Applied Materials, Inc.Inventors: Melisa J. Buie, Brigitte C. Stoehr
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Patent number: 6960413Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a photolithographic reticle including positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on a silicon-based substrate, and a patterned resist material deposited on the silicon-based substrate, etching the substrate with an oxygen-free processing gas, and then etching the substrate with an oxygen containing processing gas.Type: GrantFiled: March 18, 2004Date of Patent: November 1, 2005Assignee: Applied Materials, Inc.Inventors: Cynthia B. Brooks, Melisa J. Buie, Brigitte C. Stoehr
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Publication number: 20040072081Abstract: Method and apparatus for etching an optically transparent layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for etching a substrate comprising placing the reticle on a support member in a processing chamber, positioning the reticle on a support member in a processing chamber, wherein the reticle comprises a patterned metal photomask layer formed on an optically transparent material, and a patterned resist material deposited on the patterned metal photomask layer, introducing a processing gas comprising one or more fluorine containing hydrocarbons and one or more chlorine-containing gases into the processing chamber, delivering power to the processing chamber to generate a plasma by applying a source RF power to a coil and applying a bias power to the support member, and etching exposed portions of the optically transparent material.Type: ApplicationFiled: May 13, 2003Publication date: April 15, 2004Inventors: Thomas P. Coleman, Yi-Chiau Huang, Melisa J. Buie, Lawrence C. Sheu, Brigitte C. Stoehr, Phillip L. Jones
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Patent number: 6534417Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.Type: GrantFiled: April 19, 2002Date of Patent: March 18, 2003Assignee: Applied Materials, Inc.Inventors: Brigitte C. Stoehr, Michael D. Welch
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Publication number: 20030049934Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, (iii) another chlorine containing gas, and optionally, (iv) an inert gas into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch exposed portions of the metal layer disposed on the substrate.Type: ApplicationFiled: September 4, 2002Publication date: March 13, 2003Applicant: Applied Materials, Inc.Inventors: Melisa J. Buie, Brigitte C. Stoehr
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Publication number: 20020155725Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.Type: ApplicationFiled: April 19, 2002Publication date: October 24, 2002Applicant: Applied Materials, Inc.Inventors: Brigitte C. Stoehr, Michael D. Welch
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Patent number: 6391790Abstract: A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the substrate. In the etching process, the substrate is positioned in a processing chamber, a processing gas comprising a fluorocarbon, which advantageously is a hydrogen free fluorocarbon, is introduced into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch the silicon based material of the substrate. The processing gas may further comprise an inert gas, such as argon.Type: GrantFiled: July 25, 2000Date of Patent: May 21, 2002Assignee: Applied Materials, Inc.Inventors: Brigitte C. Stoehr, Michael D. Welch