Abstract: A method for depositing a dielectric material on copper apparent on the surface of a structure, by placing the structure in a depositing chamber of CVD type (Chemical Vapor Deposition), adding to the chamber a first gas forming a precursor for the formation of the dielectric material and containing an element able to contaminate copper, adding to the chamber a second gas containing a chemical element intended, together with the element contained in the first gas and able to contaminate copper, to form said dielectric material, the second gas being able to react with the first gas to give the deposit of dielectric material, performing the deposit of dielectric material from the first gas and the second gas, characterized in that the method comprises a step for adding a third gas able to prevent the contamination of copper by said element contained in the first gas.

Abstract: A process produces at a predetermined metallization level at least one metal track (7) within an intertrack dielectric material (1). The process includes the steps of etching the intertrack dielectric material (1) so as to form a cavity (4) at the position of the track, depositing a conducting barrier layer (5) in the cavity (4), filling the cavity (4) with copper, and depositing a silicon nitride layer (8) on the predetermined metallization level. Between the barrier layer deposition step and the copper filling step, titanium is deposited on at least part of the barrier layer. This titanium will be transformed into TiSi2 (60) during the diffusion of the silicon from the silicon nitride layer (8).