Abstract: A method for manufacturing an electrical device that includes: anodizing a portion of an anodizable metal layer so as to obtain an anodic porous oxide region and an anodizable metal region adjoining the anodic porous oxide region, the anodic porous oxide region being thicker than the anodizable metal region; depositing a layer of liner material on the anodic porous oxide region and on the anodizable metal region; depositing a layer of filler material on the layer of liner material to obtain a stacked structure having a top surface; planarizing the stacked structure from a top surface thereof until reaching the layer of the liner material, so as to expose a portion of liner material located above at least a portion of the anodic porous oxide region; and removing the exposed portion of liner material.

Abstract: A capacitor structure that includes a substrate; a conductive layer above the substrate; and a porous layer, above the conductive layer, having pores that extend perpendicularly from a top surface of the porous layer toward the conductive layer. The porous layer comprises a first region in which pores conductive wires are disposed, and a second region in which pores a metal-insulator-metal (MIM) structure is disposed. The first region may be used as a via to contact a bottom electrode of the capacitor structure.

Abstract: An electrical device that includes: a substrate; an anodic porous oxide region above the substrate; a first capacitor electrode region arranged in the anodic porous oxide region, extending in the anodic porous oxide region, the first capacitor electrode region having a first wall perpendicular to the top surface; a second capacitor electrode region arranged in the anodic porous oxide region, extending in the anodic porous oxide region, the second capacitor electrode region having a second wall perpendicular to the top surface and facing the first wall of the first capacitor electrode region, the first wall of the first capacitor electrode region and the second wall of the second capacitor electrode region being separated by a dielectric portion comprising a part of the anodic porous oxide region.

Abstract: An electrical device that includes: a metal barrier layer; an anodic porous oxide region on the metal barrier layer; a trench around the anodic porous oxide region reaching the metal barrier layer; a liner at least on a wall of the trench on a side of the anodic porous oxide region forming an electrical isolation barrier and having an opening onto the anodic porous oxide region; a hard mask arranged above the trenches and the liner having an opening onto the anodic porous oxide region. A corresponding manufacturing method is also disclosed.

Abstract: A method for manufacturing an electrical device that includes: anodizing a portion of an anodizable metal layer so as to obtain an anodic porous oxide region and an anodizable metal region adjoining the anodic porous oxide region, the anodic porous oxide region being thicker than the anodizable metal region; depositing a layer of liner material on the anodic porous oxide region and on the anodizable metal region; depositing a layer of filler material on the layer of liner material to obtain a stacked structure having a top surface; planarizing the stacked structure from a top surface thereof until reaching the layer of the liner material, so as to expose a portion of liner material located above at least a portion of the anodic porous oxide region; and removing the exposed portion of liner material.

Abstract: An optoelectronic device including a substrate having opposite first and second surfaces; insulation trenches extending through the substrate, surrounding portions of the substrate and electrically insulating the portions from each other, each insulation trench being filled with at least one electrically insulating block and a gaseous volume or being filled with an electrically conductive element electrically isolated from the substrate; at least one light-emitting diode resting on the first surface for each portion of the substrate, the light-emitting diodes comprising wired, conical, or frustoconical semiconductor elements; an electrode layer covering at least one of the light-emitting diodes and a conductive layer overlying the electrode layer around the light-emitting diodes; and a layer encapsulating the light-emitting diodes and covering the entire first surface.

Abstract: A method of fabricating a semiconductor structure that includes: forming a first metal layer over a wafer; forming a second metal layer over the first metal layer; forming a first porous structure in a first region of the second metal layer located above a circuit area of the wafer and a second porous structure in a second region of the second metal layer located above a dicing area of the wafer, wherein the first porous structure includes a first set of pores, and wherein the second porous structure includes a second set of pores; forming a metal-insulator-metal stack in the first set of pores of the first porous structure; and etching the second set of pores of the second porous structure to expose the dicing area of the silicon wafer.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: A structure that includes: an insulating layer; a first metal layer above a first portion of the insulating layer; a first porous region of anodic oxide, above and in contact with the first metal layer; and a second porous region of anodic oxide, surrounding the first porous region, in contact with a second portion of the insulating layer adjacent to the first portion of the insulating layer, and in contact with the first metal layer, the second porous region forming an insulating region.

Abstract: An optoelectronic device including a substrate having opposite first and second surfaces; insulation trenches extending through the substrate, surrounding portions of the substrate and electrically insulating the portions from each other, each insulation trench being filled with at least one electrically insulating block and a gaseous volume or being filled with an electrically conductive element electrically isolated from the substrate; at least one light-emitting diode resting on the first surface for each portion of the substrate, the light-emitting diodes comprising wired, conical, or frustoconical semiconductor elements; an electrode layer covering at least one of the light-emitting diodes and a conductive layer overlying the electrode layer around the light-emitting diodes; and a layer encapsulating the light-emitting diodes and covering the entire first surface.

Abstract: An electronic circuit including a semiconductor substrate having first and second opposite surfaces and electric insulation trenches. Each trench separates first and second portions of the substrate and includes electrically-insulating walls made of a first electrically-insulating material, extending from the first surface to the second surface, and a core made of a filling material, separated from the substrate by the walls. For at least one of the trenches, the trench walls include electrically-insulating portions made of the first electrically-insulating material protruding from the first or second surface outside of the substrate and/or the trench includes an electrically-insulating wall made of the first electrical-insulating material protruding from the first or second surface outside of the substrate and coupling the trench walls.

Abstract: An electronic circuit including a semiconducting or conducting substrate having first and second opposite surfaces and at least first and second non-parallel electrically insulating trenches that extend from the first surface in the substrate, define at least one portion of the substrate and join at a junction, the portion of the substrate including a protrusion that extends to the junction.

Abstract: An electronic circuit including a semiconducting or conducting substrate having first and second opposite surfaces and at least first and second non-parallel electrically insulating trenches that extend from the first surface in the substrate, define at least one portion of the substrate and join at a junction, the portion of the substrate including a protrusion that extends to the junction.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: The invention relates to a method of producing a semiconductor structure by transferring a layer of a donor substrate to a receiver substrate, with the creation of an embrittlement zone in the donor substrate to define the transfer layer, and the treatment of the surface of one of the substrates to increase the bonding strength between them, followed by the direct wafer bonding of the substrates and the detachment of the donor substrate at the embrittlement zone to form the semiconductor structure, in which the surface of the receiver substrate, except for a peripheral crown, is covered with the transferred layer. The treatment of the substrate surface is controlled so that the bonding strength between the substrates is lower in a peripheral area than in a central area. The peripheral area has a width at least equal to the that of the crown and less than 10 mm.

Abstract: The invention relates to a method of producing a semiconductor structure by transferring a layer of a donor substrate to a receiver substrate, with the creation of an embrittlement zone in the donor substrate to define the transfer layer, and the treatment of the surface of one of the substrates to increase the bonding strength between them, followed by the direct wafer bonding of the substrates and the detachment of the donor substrate at the embrittlement zone to form the semiconductor structure, in which the surface of the receiver substrate, except for a peripheral crown, is covered with the transferred layer. The treatment of the substrate surface is controlled so that the bonding strength between the substrates is lower in a peripheral area than in a central area. The peripheral area has a width at least equal to the that of the crown and less than 10 mm.