Patents by Inventor Brook Hsu

Brook Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    Publication number: 20070259503
    Abstract: A method of fabricating a semiconductor device is provided herein. The semiconductor device includes a substrate, a gate dielectric layer, a gate, a pair of source/drain regions and a stressed layer. The gate dielectric layer is disposed on the substrate and the gate whose top area is larger than its bottom area is disposed on the gate dielectric layer. The source/drain regions are disposed in the substrate next to the sidewalls of the gate. The stressed layer is disposed on the substrate to cover the gate and the source/drain regions.
    Type: Application
    Filed: July 13, 2007
    Publication date: November 8, 2007
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Chen Chang, Tony Lin, Brook Hsu, Cyrus LW Chen, Meng-Lin Lee, Wei-Tsun Shiau
  • SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
    Publication number: 20070224745
    Abstract: A semiconductor device including a substrate, a gate dielectric layer, a gate, a pair of source/drain regions and a stressed layer is disclosed. The gate dielectric layer is disposed on the substrate and the gate whose top area is larger than its bottom area is disposed on the gate dielectric layer. The source/drain regions are disposed in the substrate next to the sidewalls of the gate. The stressed layer is disposed on the substrate to cover the gate and the source/drain regions.
    Type: Application
    Filed: March 21, 2006
    Publication date: September 27, 2007
    Inventors: Hui-Chen Chang, Tony Lin, Brook Hsu, Cyrus LW Chen, Meng-Lin Lee, Wei-Tsun Shiau