Abstract: After forming a manganese (Mn)-containing cap layer over interconnects embedded in an interlevel dielectric (ILD) layer, a lithographic stack is formed over the Mn-containing cap layer. The lithographic stack is subsequently patterned to expose a portion of the Mn-containing cap layer that overlies a subset of the interconnects between which the air gaps are to be formed. A portion of the ILD layer located between the subset of the interconnects is damaged through the exposed portion of the Mn-containing cap layer. The damaged portion of the ILD layer is subsequently removed to form openings between the subset of the interconnects. The Mn-containing cap layer acts as a temporary protection layer preventing erosion of the underlying interconnects during the air gap formation.

Abstract: A method utilizing a chemical mechanical polishing process to remove a patterned material stack comprising at least one pattern transfer layer and a template layer during a rework process or during a post pattern transfer cleaning process is provided. The pattern in the patterned material stack is formed by pattern transfer of a directed self-assembly pattern generated from microphase separation of a self-assembly material.

Abstract: A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×1019 atoms/cm3; collecting the mixture after reacting with the boron doped portions of the one or more silicon wafers; and adding collected mixture back into the solution container to create the etch solution.

Abstract: An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.

Abstract: A method utilizing a chemical mechanical polishing process to remove a patterned material stack comprising at least one pattern transfer layer and a template layer during a rework process or during a post pattern transfer cleaning process is provided. The pattern in the patterned material stack is formed by pattern transfer of a directed self-assembly pattern generated from microphase separation of a self-assembly material.

Abstract: A method utilizing a chemical mechanical polishing process to remove a patterned material stack comprising at least one pattern transfer layer and a template layer during a rework process or during a post pattern transfer cleaning process is provided. The pattern in the patterned material stack is formed by pattern transfer of a directed self-assembly pattern generated from microphase separation of a self-assembly material.