Abstract: A network protocol method (300), access point device (600) and peripheral devices (700, 800) provide an efficient centrally coordinated peer-to-peer wireless communications network wherein the access point device: (1) broadcasts a block assignment that specifies a wireless source peripheral device and a wireless destination peripheral device; (2) receives, from the wireless destination peripheral device, sequence information; (3) determines whether the sequence information represents one of: a negative acknowledgment and a positive acknowledgment with a sequence number; (4) forwards an acknowledgment to the wireless source peripheral based on the sequence information, and repeats steps (1)-(4) until N blocks of data, N a predetermined integer, have been transferred from the wireless source peripheral to the wireless destination peripheral.

Abstract: A method is provided for forming an intermediate level in an integrated circuit dielectric during a damascene process using a photoresist mask having an intermediate thickness. The method forms an interconnect to a first depth in the dielectric through an opening in the photoresist pattern. The photoresist profile is partially etched away in the area of the intermediate thickness to reveal a second dielectric surface area. The second dielectric surface area is then etched to a second depth less than the first depth. In this manner, vias can be formed to the first depth, and lines can be formed at a second depth to intersect the vias. The method of the present invention allows a dual damascene process to be performed with a single step of photoresist formation.

Abstract: The system and method consistent with the present invention provides improved graphical navigation tool for electronic devices. The graphical navigation tools may be used to navigate through documents at any direction at varying speeds. The navigation tool is preferably transparent to prevent obscuring the text of the underlying document. Accordingly, the navigational tool does not take up additional screen real estate. The GUI of the present invention may be especially useful in portable electronic devices with small displays.

Abstract: A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.

Abstract: A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an intermediate intensity light. The intermediate intensity light has an intensity approximately midway between the intensity of the unattenuated light passing through the reticle substrate layer, and the totally attenuated light blocked by an opaque layer of the reticle. The exposed photoresist receives light at two intensities to form a via hole in the resist in response to the higher intensity light, and a connecting line to the via at an intermediate level of the photoresist in response to the intermediate light intensity. A method for forming the multi-level resist profile from the multi-level reticle is provided as well as a multi-level reticle apparatus.

Abstract: A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an intermediate intensity of phase shifted light. The intermediate intensity light has an intensity approximately midway between the intensity of the unattenuated light passing through the reticle substrate layer, and the totally attenuated light blocked by an opaque layer of the reticle. The exposed photoresist receives light at two intensities to form a via hole in the resist in response to the higher intensity light, and a connecting line to the via at an intermediate level of the photoresist in response to the intermediate light intensity. A method for forming the multi-level resist profile from the multi-level reticle is provided as well as a multi-level reticle apparatus.

Abstract: A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an intermediate intensity light. The intermediate intensity light has an intensity approximately midway between the intensity of the unattenuated light passing through the reticle substrate layer, and the totally attenuated light blocked by an opaque layer of the reticle. The exposed photoresist receives light at two intensities to form a via hole in the resist in response to the higher intensity light, and a connecting line to the via at an intermediate level of the photoresist in response to the intermediate light intensity. A method for forming the multi-level resist profile from the multi-level reticle is provided as well as a multi-level reticle apparatus.

Abstract: A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.

Abstract: A method is provided for forming intermediate levels in an integrated circuit dielectric during a damascene process using a hard mask layer to transfer the pattern of a photoresist mask having at least one intermediate thickness. The dielectric is covered with a hard mask layer, and the hard mask layer is covered with the photoresist mask. The photoresist mask pattern is transferred into the hard mask pattern so that the hard mask pattern has at least one intermediate thickness. The method forms an interconnect to a first depth in the dielectric through an opening in the hard mask pattern. The hard mask pattern is partially etched away in the area of the intermediate thickness to reveal a second dielectric surface area. The second dielectric surface area is etched to a second depth, less than the first depth. In this manner, vias can be formed to the first depth, and lines can be formed at a second depth to intersect the vias.

Abstract: A method is provided for forming multi-level profiles from a photoresist mask. The method includes exposing selected areas of a photoresist layer to two or more different patterns of light at different light dosage levels. For example, one pattern will be exposed to a relatively low dose of light, or to light for a short duration, and a second pattern will be exposed to a relatively high dose of light, or for a greater duration. The plurality of different exposures at different dosage levels occur prior to developing the photoresist. When the photoresist layer is developed, the pattern exposed to a lower dose of light will be etched substantially more slowly than the areas of the photoresist exposed to higher dose of light. By controlling the development process to completely remove the resist in the areas exposed to a high dose of light and only partially remove the resist in the areas exposed to a lower dose of light, a multi-level photoresist profile is formed.

Abstract: A method and apparatus reduce power consumption in a subscriber unit of a communication system. The subscriber unit has a processor (10) for processing non-voice messages received from the communication system. The method includes the steps of receiving a communication signal (18) at the subscriber unit, detecting a presence or an absence of non-voice messages (20) in the communication signal, and disabling the processor (24) in response to detecting the absence of non-voice messages in the communication signal. The apparatus includes a receiver (12), a message detector (14) and a controller (16) for carrying out the foregoing steps.

Abstract: A method of synchronizing a fixed access unit (16) into a time division multiple access (TDMA) system (10). The method includes the steps of receiving a first timing advance channel time slot (86) at the fixed access unit (16), sending a message advanced in time by an offset value over a second time slot (88), receiving an acknowledgment from the TDMA system (10) that the message was received, and advancing a subsequently transmitted communication based on the offset value.

Abstract: An intrinsically safe telephone as provided for use in hazardous areas. The telephone includes a single line instrument located in the hazardous area which, in turn, is coupled by a two-wire transmission path to a shunt diode barrier and a telephone line interface located in a safe environment. The telephone line interface reduces power of incoming ringing and audio signals. The telephone line interface further includes an off-hook indicating circuit which senses when the single line instrument is off-hook. The intrinsically safe telephone is useful in all hazardous environments as classified by the National Electrical Code and requires no explosion-proof housing.