Patents by Inventor Bruce A. Ek
Bruce A. Ek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10790398Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.Type: GrantFiled: June 14, 2018Date of Patent: September 29, 2020Assignee: International Business Machines CorporationInventors: Priscilla D. Antunez, Bruce A. Ek, Richard A. Haight, Ravin Mankad, Saurabh Singh, Teodor K. Todorov
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Publication number: 20180294368Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.Type: ApplicationFiled: June 14, 2018Publication date: October 11, 2018Inventors: Priscilla D. Antunez, Bruce A. Ek, Richard A. Haight, Ravin Mankad, Saurabh Singh, Teodor K. Todorov
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Patent number: 10014423Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.Type: GrantFiled: September 30, 2016Date of Patent: July 3, 2018Assignee: International Business Machines CorporationInventors: Priscilla D. Antunez, Bruce A. Ek, Richard A. Haight, Ravin Mankad, Saurabh Singh, Teodor K. Todorov
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Publication number: 20180123066Abstract: Techniques for forming a transparent conducting oxide (TCO) top contact using a low temperature process are provided. In one aspect of the invention, a method of forming a TCO on a substrate is provided. The method includes the steps of: generating a source gas of the TCO using e-beam evaporation; generating atomic oxygen using RF plasma; and contacting the substrate with the TCO source gas and the atomic oxygen under conditions sufficient to form the TCO on the substrate. A photovoltaic device is also provided which includes a bottom cell; and a perovskite-based top cell on the kesterite-based bottom cell. The perovskite-based top cell includes a top electrode formed from a TCO.Type: ApplicationFiled: December 28, 2017Publication date: May 3, 2018Inventors: Bruce A. Ek, Talia S. Gershon, Supratik Guha, Oki Gunawan, Teodor K. Todorov
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Publication number: 20180097130Abstract: Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.Type: ApplicationFiled: September 30, 2016Publication date: April 5, 2018Inventors: Priscilla D. Antunez, Bruce A. Ek, Richard A. Haight, Ravin Mankad, Saurabh Singh, Teodor K. Todorov
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Patent number: 9911935Abstract: Techniques for forming a transparent conducting oxide (TCO) top contact using a low temperature process are provided. In one aspect of the invention, a method of forming a TCO on a substrate is provided. The method includes the steps of: generating a source gas of the TCO using e-beam evaporation; generating atomic oxygen using RF plasma; and contacting the substrate with the TCO source gas and the atomic oxygen under conditions sufficient to form the TCO on the substrate. A photovoltaic device is also provided which includes a bottom cell; and a perovskite-based top cell on the kesterite-based bottom cell. The perovskite-based top cell includes a top electrode formed from a TCO.Type: GrantFiled: September 4, 2015Date of Patent: March 6, 2018Assignee: International Business Machines CorporationInventors: Bruce A. Ek, Talia S. Gershon, Supratik Guha, Oki Gunawan, Teodor K. Todorov
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Publication number: 20170069861Abstract: Techniques for forming a transparent conducting oxide (TCO) top contact using a low temperature process are provided. In one aspect of the invention, a method of forming a TCO on a substrate is provided. The method includes the steps of: generating a source gas of the TCO using e-beam evaporation; generating atomic oxygen using RF plasma; and contacting the substrate with the TCO source gas and the atomic oxygen under conditions sufficient to form the TCO on the substrate. A photovoltaic device is also provided which includes a bottom cell; and a perovskite-based top cell on the kesterite-based bottom cell. The perovskite-based top cell includes a top electrode formed from a TCO.Type: ApplicationFiled: September 4, 2015Publication date: March 9, 2017Inventors: Bruce A. Ek, Talia S. Gershon, Supratik Guha, Oki Gunawan, Teodor K. Todorov
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Patent number: 5759898Abstract: A process and method for producing strained and defect free semiconductor layers. In a preferred embodiment, silicon on insulator may be used as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, whereby the SiGe layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an SOI substrate with a superficial silicon thickness. Initially the strain in the SiGe layer becomes equalized with the thin Si layer by creating tensile strain in the Si layer. Then the strain created in the thin Si layer is relaxed by plastic deformation during an anneal. Since dislocations are formed, and glide in the thin Si layer, threading dislocations are not introduced into the upper SiGe material. A strained silicon layer for heterostructures may then be formed on the SiGe material.Type: GrantFiled: December 19, 1996Date of Patent: June 2, 1998Assignee: International Business Machines CorporationInventors: Bruce A. Ek, Subramanian Srikanteswara Iyer, Philip Michael Pitner, Adrian R. Powell, Manu Jamndas Tejwani
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Patent number: 5563428Abstract: A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms.According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.Type: GrantFiled: January 30, 1995Date of Patent: October 8, 1996Inventors: Bruce A. Ek, Stephen M. Gates, Fernando J. Guarin, Subramanian S. Iyer, Adrian R. Powell
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Patent number: 5461243Abstract: A structure with strained and defect free semiconductor layers. In a preferred embodiment, silicon on insulator may be used as a substrate for the growth of fully relaxed SiGe buffer layers. A new strain relief mechanism operates, whereby the SiGe layer relaxes without the generation of threading dislocations within the SiGe layer. This is achieved by depositing SiGe on an SOI substrate with a superficial silicon thickness. Initially the strain in the SiGe layer becomes equalized with the thin Si layer by creating tensile strain in the Si layer. Then the strain created in the thin Si layer is relaxed by plastic deformation during an anneal. Since dislocations are formed, and glide in the thin Si layer, threading dislocations are not introduced into the upper SiGe material. A strained silicon layer for heterostructures may then be formed on the SiGe material.Type: GrantFiled: October 29, 1993Date of Patent: October 24, 1995Assignee: International Business Machines CorporationInventors: Bruce A. Ek, Subramanian S. Iyer, Philip M. Pitner, Adrian R. Powell, Manu J. Tejwani
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Patent number: 5135887Abstract: A simple effective and fairly stable boron source that is easy to prepare and simple to operate under UHV processing conditions is disclosed. The method for fabricating this boron source includes the in situ alloying of boron into a high melting point elemental semiconductor material, preferably silicon, in the hearth of an electron beam evaporator. A supersaturated solution of boron in silicon is created by melting the silicon and dissolving the boron into it and quenching the solution. The boron needs to be of high purity and may be in the form of crystalline granules for this to take place under controlled conditions and moderate power levels. When silicon is evaporated from this resultant silicon-boron alloy source, the silicon evaporates uncontaminated from a molten pool of the alloy in the center of the hearth. A segregation of boron into the liquid phase occurs and a segregation takes place from this molten phase into the vapor phase that is being evaporated from the pool.Type: GrantFiled: June 10, 1991Date of Patent: August 4, 1992Assignee: International Business Machines CorporationInventors: Sylvain L. Delage, Bruce A. Ek, Subramanian S. Iyer