Abstract: Assemblies and methods for sensing current through semiconductor device leads are disclosed. One example method includes mounting a current sense assembly about a lead of a semiconductor device. The current sense assembly may include a carrier adapted to hold a current sensor in close proximity to a semiconductor device lead to sense current flowing in the lead. One example assembly for sensing current through a semiconductor device lead includes a carrier for mounting to the semiconductor device lead and a current sensor supported by the carrier. The carrier includes output terminals. The current sensor has leads electrically coupled to the output terminals. The current sensor is positioned to extend around at least a portion of the lead and provide a signal to the output terminals representing current flowing in the lead when the carrier is mounted to the lead.

Abstract: An ORing element for use in a power supply and/or power system. The ORing element may include a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor. The FET may be electrically connected between an input and an output. The first bipolar transistor may have an emitter electrically connected to the source of the FET and a collector electrically connected to a gate of the FET. The second bi-polar transistor may be diode connected, with its emitter electrically connected to its base. The emitter of the second bi-polar transistor may also be electrically connected to the base of the first bi-polar transistor. The collector of the second bi-polar transistor may be electrically connected to the drain of the FET.

Abstract: An ORing element for use in a power supply and/or power system. The ORing element may include a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor. The FET may be electrically connected between an input and an output. The first bipolar transistor may have an emitter electrically connected to the source of the FET and a collector electrically connected to a gate of the FET. The second bi-polar transistor may be diode connected, with its emitter electrically connected to its base. The emitter of the second bi-polar transistor may also be electrically connected to the base of the first bi-polar transistor. The collector of the second bi-polar transistor may be electrically connected to the drain of the FET.

Abstract: An ORing element for use in a power supply and/or power system. The ORing element may include a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor. The FET may be electrically connected between an input and an output. The first bipolar transistor may have an emitter electrically connected to the source of the FET and a collector electrically connected to a gate of the FET. The second bi-polar transistor may be diode connected, with its emitter electrically connected to its base. The emitter of the second bi-polar transistor may also be electrically connected to the base of the first bi-polar transistor. The collector of the second bi-polar transistor may be electrically connected to the drain of the FET.

Abstract: A depletion load element for connection between a supply line V.sub.CC and a node 10 includes an enhancement mode field effect transistor 12 having a source 14 connected to the node 10, a gate 15 connected to the supply line, and a drain 25 connected to a second node; and a depletion mode field effect transistor 20 having a drain 21 connected to the supply line V.sub.CC and having a source 23 connected to the second node. The gate 22 is connected to one of the first or second nodes.