Abstract: A cold wall CVD reactor, particularly one for use in depositing TiN in a TiCl.sub.4 +NH.sub.3 reaction, is provided with a metallic liner insert in partially thermally insulated from the reactor wall which serves as one plasma electrode to form a weak secondary plasma when energized along with a second electrode near the vacuum exhaust port of the reactor. The plasma, in cooperation with radiant lamps provided to heat a wafer substrate onto which the primary CVD film is to be applied, heats the liner and a portion of the space adjacent the reactor walls and susceptor surfaces downstream of the reaction volume to cause the formation of deposits to be of the nature that can be removed by plasma cleaning without opening the reactor volume. Deposits such as TiN.sub.x Cl.sub.y and TiN form at temperatures of approximately 200.degree. C. to 650.degree. C., preferably between 300.degree. C. and 450.degree. C., rather than adduct ammonia salts of TiCl.sub.4, which would tend to form at temperatures of 200.degree. C.

Abstract: A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition includes a post-deposition ammonia anneal to provide hydrogen atoms which chemically react with chlorine atoms entrained within the titanium nitride film. The titanium nitride film is deposited by placing the silicon substrate in a reaction chamber, heating the silicon substrate within the reaction chamber, initially passing both TiCl.sub.4 gas and NH.sub.3 gas into the reaction chamber over the silicon substrate to deposit titanium nitride upon a surface of the silicon substrate, and thereafter discontinuing the flow of TiCl.sub.4 gas while continuing to pass NH.sub.3 gas into the reaction chamber over the silicon substrate to react with and remove residual chlorine atoms retained by the deposited titanium nitride film.

Abstract: A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition includes a post-deposition ammonia anneal to provide hydrogen atoms which chemically react with chlorine atoms entrained within the titanium nitride film. The titanium nitride film is deposited by placing the silicon substrate in a reaction chamber, heating the silicon substrate within the reaction chamber, initially passing both TiCl.sub.4 gas and NH.sub.3 gas into the reaction chamber over the silicon substrate to deposit titanium nitride upon a surface of the silicon substrate, and thereafter discontinuing the flow of TiCl.sub.4 gas while continuing to pass NH.sub.3 gas into the reaction chamber over the silicon substrate to react with and remove residual chlorine atoms retained by the deposited titanium nitride film.

Abstract: A cold wall CVD reactor, particularly one for use in depositing TiN in a TiCl.sub.4 +NH.sub.3 reaction, is provided with a metallic liner insert in partially thermally insulated from the reactor wall which serves as one plasma electrode to form a weak secondary plasma when energized along with a second electrode near the vacuum exhaust port of the reactor. The plasma, in cooperation with radiant lamps provided to heat a wafer substrate onto which the primary CVD film is to be applied, heats the liner and a portion of the space adjacent the reactor walls and susceptor surfaces downstream of the reaction volume to cause the formation of deposits to be of the nature that can be removed by plasma cleaning without opening the reactor volume. Deposits such as TiN.sub.x Cl.sub.y and TiN form at temperatures of approximately 200.degree. C. to 650.degree. C., preferably between 300.degree. C. and 450.degree. C., rather than adduct ammonia salts of TiCl.sub.4, which would tend to form at temperatures of 200.degree. C.