Abstract: Embodiments of the invention couple a non-linear force to a vibration element such as a piezoelectric cantilever to introduce chaotic, i.e., non-resonant vibration in the vibration element and thereby improve the non-resonant response of the vibration element. By doing so, the vibration element is responsive to a wider frequency range of vibrations and thus may be more efficient in scavenging energy in environments where the vibration frequency is not constant, e.g., in environment subject to multi-mode or random vibration sources.

Abstract: An Agent Delivery System allows for targeted and controlled delivery of an agent or agents to target site, such as specific cells or a specific tissue of an individual. An exemplary Agent Delivery System includes a platform, having a silica crystal lattice base plate, coated with a collagen-containing layer. At least one agent of interest is disposed within the platform, for delivering to the target site. The agent is released when the Agent Delivery Platform is exposed to collagen-degrading compounds. Collagen-degrading compounds can be secreted by cells within a target site.

Abstract: A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) between the barriers. The diameter of the pillars is typically of the order of 20-50 nm and is sufficiently small that the device exhibits first and second relatively high and low stable resistive states in the absence of an applied voltage between the terminal regions. The device can be used as a non-volatile memory at room temperature.

Abstract: A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) between the barriers. The diameter of the pillars is typically of the order of 20-50 nm and is sufficiently small that the device exhibits first and second relatively high and low stable resistive states in the absence of an applied voltage between the terminal regions. The device can be used as a non-volatile memory at room temperature.