Abstract: A thin film composite polyamide membrane comprising a porous support and a thin film polyamide layer characterized by possessing: i) an azo (—N?N—) content of from 0.40% to 1.00%, as measured by pyrolysis gas chromatography; and ii) a dissociated carboxylate content of at least 0.40 mol/kg as measured by RBS at pH 9.5.

Abstract: A thin film composite polyamide membrane comprising a porous support and a thin film polyamide layer characterized by possessing: i) an azo (—N?N—) content of from 0.30% to 0.80%, as measured by pyrolysis gas chromatography; and ii) a dissociated carboxylate content of at least 0.18 mol/kg as measured by RBS at pH 9.5.

Abstract: A thin film composite polyamide membrane comprising a porous support and a thin film polyamide layer characterized by possessing an azo (—N?N—) content of from 0.75% to 0.95%, as measured by pyrolysis gas chromatography.

Abstract: A method for making a composite polyamide membrane including the step of applying a polar solution including a polyfunctional amine monomer and a non-polar solution comprising a polyfunctional acyl halide monomer to a surface of a porous support and interfacially polymerizing the monomers to form a thin film polyamide layer, wherein the method is characterized by including a tri-hydrocarbyl phosphate within the polar coating solution. The thin film polyamide layer is characterized by possessing an equilibrium water swelling factor of greater than 35% as measured by PFT-AFM.

Abstract: A thin film composite polyamide membrane comprising a porous support and a thin film polyamide layer characterized by possessing: i) an azo (—N?N—) content of from 0.30% to 0.80%, as measured by pyrolysis gas chromatography; and ii) a dissociated carboxylate content of at least 0.18 mol/kg as measured by RBS at pH 9.5.

Abstract: The present invention provides methods for using single source organometallic precursors in the fabrication of polycrystalline Group III-Group V compounds, preferably semiconductor compounds. The present invention teaches how to select organometallic ligands in single-source precursors in order to control the stoichiometry of the corresponding Group III-Group V compounds derived from these precursors. The present invention further teaches how to anneal precursors in the presence of one or more flux agents in order to increase the crystalline grain size of polycrystalline Group III-Group V compounds derived from organometallic precursors. This helps to provide Group III-Group V semiconductors with better electronic properties. The flux layer also helps to control the stoichiometry of the Group III-Group V compounds.

Abstract: A thin film composite polyamide membrane comprising a porous support and a thin film polyamide layer characterized by possessing: i) an azo (—N?N—) content of from 0.40% to 1.00%, as measured by pyrolysis gas chromatography; and ii) a dissociated carboxylate content of at least 0.40 mol/kg as measured by RBS at pH 9.5.

Abstract: A thin film composite polyamide membrane comprising a porous support and a thin film polyamide layer characterized by possessing an azo (—N?N—) content of from 0.75% to 0.95%, as measured by pyrolysis gas chromatography.

Abstract: A thin film composite polyamide membrane including a porous support and a thin film polyamide layer which is a reaction product of m-phenylene diamine (mPD) and trimesoyl chloride (TMC), wherein the membrane is characterized by the thin film polyamide layer having a dissociated carboxylic acid content of at least 0.18 moles/kg at pH 9.5, and wherein pyrolysis of the thin film polyamide layer at 650 C results in a ratio of responses from a flame ionization detector for fragments produced at 212 m/z and 237 m/z of less than 2.8.