Abstract: Integrated circuit cell architectures including both front-side and back-side structures. One or more of back-side implant, semiconductor deposition, dielectric deposition, metallization, film patterning, and wafer-level layer transfer is integrated with front-side processing. Such double-side processing may entail revealing a back side of structures fabricated from the front-side of a substrate. Host-donor substrate assemblies may be built-up to support and protect front-side structures during back-side processing. Front-side devices, such as FETs, may be modified and/or interconnected during back-side processing. Electrical test may be performed from front and back sides of a workpiece. Back-side devices, such as FETs, may be integrated with front-side devices to expand device functionality, improve performance, or increase device density.

Abstract: Integrated circuit cell architectures including both front-side and back-side structures. One or more of back-side implant, semiconductor deposition, dielectric deposition, metallization, film patterning, and wafer-level layer transfer is integrated with front-side processing. Such double-side processing may entail revealing a back side of structures fabricated from the front-side of a substrate. Host-donor substrate assemblies may be built-up to support and protect front-side structures during back-side processing. Front-side devices, such as FETs, may be modified and/or interconnected during back-side processing. Electrical test may be performed from front and back sides of a workpiece. Back-side devices, such as FETs, may be integrated with front-side devices to expand device functionality, improve performance, or increase device density.

Abstract: Integrated circuit cell architectures including both front-side and back-side structures. One or more of back-side implant, semiconductor deposition, dielectric deposition, metallization, film patterning, and wafer-level layer transfer is integrated with front-side processing. Such double-side processing may entail revealing a back side of structures fabricated from the front-side of a substrate. Host-donor substrate assemblies may be built-up to support and protect front-side structures during back-side processing. Front-side devices, such as FETs, may be modified and/or interconnected during back-side processing. Electrical test may be performed from front and back sides of a workpiece. Back-side devices, such as FETs, may be integrated with front-side devices to expand device functionality, improve performance, or increase device density.

Abstract: Integrated circuit cell architectures including both front-side and back-side structures. One or more of back-side implant, semiconductor deposition, dielectric deposition, metallization, film patterning, and wafer-level layer transfer is integrated with front-side processing. Such double-side processing may entail revealing a back side of structures fabricated from the front-side of a substrate. Host-donor substrate assemblies may be built-up to support and protect front-side structures during back-side processing. Front-side devices, such as FETs, may be modified and/or interconnected during back-side processing. Back-side devices, such as FETs, may be integrated with front-side devices to expand device functionality, improve performance, or increase device density.

Abstract: Integrated circuit cell architectures including both front-side and back-side structures. One or more of back-side implant, semiconductor deposition, dielectric deposition, metallization, film patterning, and wafer-level layer transfer is integrated with front-side processing. Such double-side processing may entail revealing a back side of structures fabricated from the front-side of a substrate. Host-donor substrate assemblies may be built-up to support and protect front-side structures during back-side processing. Front-side devices, such as FETs, may be modified and/or interconnected during back-side processing. Back-side devices, such as FETs, may be integrated with front-side devices to expand device functionality, improve performance, or increase device density.

Abstract: The apparatus introduces a second adjustable resonant point in a QMS at a frequency that is close to a multiple of the fundamental frequency by adjusting driving point impedance characteristics of the QMS. The apparatus measures the first and second resonant point of the QMS to account for changes in the operational characteristics of the QMS.

Abstract: The apparatus introduces a second adjustable resonant point in a QMS at a frequency that is close to a multiple of the fundamental frequency by adjusting driving point impedance characteristics of the QMS. The apparatus measures the first and second resonant point of the QMS to account for changes in the operational characteristics of the QMS.

Abstract: An improvement in the method of fabricating on chip decoupling capacitors which help prevent L di/dt voltage droop on the power grid for high surge current conditions is disclosed. The inclusion of a hybrid metal/metal nitride top electrode/barrier provides for a low cost and higher performance option to strapping decoupling capacitors.

Abstract: A semiconductor device is described with a photodetector embedded within and a method of manufacturing the same. The photodetector may be formed above the conductive layers within the device and may detect transmitted light from the top side of the device. The process of manufacturing the device may include a damascene or a subtractive etch process.

Abstract: An apparatus and method for embedding a laser source on a semiconductor substrate and an optical interconnect to couple the laser source to internal components of the semiconductor substrate. An on-die waveguide is integrated on the semiconductor substrate. A package waveguide is disposed on the semiconductor substrate and evanescently coupled to the on-die waveguide. The laser source is embedded within the packaged waveguide to provide an optical signal to the on-die waveguide via the package waveguide.

Abstract: A photosensitive device for enabling high speed detection of electromagnetic radiation. The device includes recessed electrodes for providing a generally homogeneous electric field in an active region. Carriers generated in the active region are detected using the recessed electrodes.

Abstract: A method of protecting a sensitive layer from harsh chemistries. The method includes forming a first sensitive layer, forming a second layer upon the first layer, then forming a third layer over the second layer. The third layer is utilized as a mask during patterning of the second layer. During patterning, however, the second layer is only partially etched, thus leaving a buffer layer overlying the first layer. The third layer is completely removed while the buffer layer protects the first layer from the harsh chemicals that are utilized to remove the third layer. Then, the buffer layer is carefully removed down to the surface of the first layer.

Abstract: On-chip decoupling capacitor structures, and methods of fabricating such decoupling capacitors are disclosed. On-chip decoupling capacitors help to reduce or prevent L di/dt voltage droop on the power grid for high surge current conditions. The inclusion of one or more decoupling capacitors on a chip, in close proximity to the power grid conductors reduces parasitic inductance and thereby provides improved decoupling performance with respect to high frequency noise. In one embodiment of the present invention, a capacitor stack structure is inserted between metal interconnect layers. Such a capacitor stack may consist of a bottom electrode/barrier; a thin dielectric material having a high dielectric constant; and a top electrode/barrier. In an alternative embodiment, the bottom electrode and/or bottom metal interconnect layer have three dimensional texture to increase the surface area of the capacitor.

Abstract: An integrated waveguide and photodetector which are evanescently coupled, and methods of making such integrated waveguide and photodetector.

Abstract: A pulse laser generates a pulse train. A modulator receives the pulse train and a data signal. The modulator encodes the data signal onto the pulse train by selectively passing pulses.

Abstract: An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method including forming an interlayer dielectric including alternating layers of dissimilar dielectric materials in a multilayer stack over a metal layer of a device structure; forming a via having a corrugated sidewall; and forming a decoupling capacitor stack in the via that conforms to the sidewall of the via.

Abstract: A photosensitive device for enabling high speed detection of electromagnetic radiation. The device includes recessed electrodes for providing a generally homogeneous electric field in an active region. Carriers generated in the active region are detected using the recessed electrodes.

Abstract: Waveguide couplers to efficiently couple light from one waveguide to another with different cross sections, including but not limited to waveguides in compact integrated packages fabricated on substrates.

Abstract: A semiconductor based structure containing substantially smoothed waveguides having a rounded surface is disclosed, as well as methods of fabricating such a structure. The substantially smoothed waveguides may be formed of waveguide materials such as amorphous silicon or stoichiometric silicon nitride. The substantially smoothed waveguides are formed with an isotropic wet etch combined with sonic energy.

Abstract: Optical waveguide devices having adjustable waveguide cladding wherein the waveguide cladding is adjustable by using an external control or stimulus to change an optical characteristic of the waveguide cladding, e.g., the refractive index of the cladding. Such waveguide devices may be designed to have certain features that are suitable for monolithically integrated opto-electronic devices and systems.