Abstract: Techniques and mechanisms for exchanging information between a memory controller and a memory device. In an embodiment, a memory controller receives information indicating for a memory device a threshold number of pending consolidated activation commands to access that memory device. The threshold number indicated by the information is less than a theoretical maximum number of pending consolidated activation commands, the theoretical maximum number defined based on timing parameters of the memory device. In another embodiment, the memory controller limits communication of consolidated activation commands to the memory device based on the information indicating the threshold number.

Abstract: Techniques and mechanisms for exchanging information between a memory controller and a memory device. In an embodiment, a memory controller receives information indicating for a memory device a threshold number of pending consolidated activation commands to access that memory device. The threshold number indicated by the information is less than a theoretical maximum number of pending consolidated activation commands, the theoretical maximum number defined based on timing parameters of the memory device. In another embodiment, the memory controller limits communication of consolidated activation commands to the memory device based on the information indicating the threshold number.

Abstract: Techniques and mechanisms for exchanging information between a memory controller and a memory device. In an embodiment, a memory controller receives information indicating for a memory device a threshold number of pending consolidated activation commands to access that memory device. The threshold number indicated by the information is less than a theoretical maximum number of pending consolidated activation commands, the theoretical maximum number defined based on timing parameters of the memory device. In another embodiment, the memory controller limits communication of consolidated activation commands to the memory device based on the information indicating the threshold number.

Abstract: Techniques and mechanisms for exchanging information between a memory controller and a memory device. In an embodiment, a memory controller receives information indicating for a memory device a threshold number of pending consolidated activation commands to access that memory device. The threshold number indicated by the information is less than a theoretical maximum number of pending consolidated activation commands, the theoretical maximum number defined based on timing parameters of the memory device. In another embodiment, the memory controller limits communication of consolidated activation commands to the memory device based on the information indicating the threshold number.

Abstract: Memory control techniques for dual channel lockstep configurations are disclosed. In accordance with one example embodiment, a memory controller issues two burst-length 4 DRAM commands to two double-data-rate (DDR) DRAM sub-channels behind a memory buffer (e.g., FB-DIMM or buffer-on-board). The two commands are in time-staggered lockstep. The time-stagger allows data coming back from the two back-side DDR sub-channels to flow naturally on the host channel without conflict. Multiple DIMMs can be used to obtain chip-fail ECC capabilities and to reclaim at least some of the lost performance imposed by the burst-length of 4 s typically associated with dual channel lockstep memory controllers. The techniques can be implemented, for instance, with a buffered memory solution such as fully buffered DIMM (FB-DIMM) or buffer-on-board configurations.

Abstract: A memory controller uses a scheme to retire two entries from a replay queue due to a single non-error response. Advantageously, entries in a replay queue may be retired earlier than conventional systems, minimizing the size of the replay queue.

Abstract: A torsional vibration damper having a hub carrying a radially projecting flange and an annular inertia mass defining an annular channel encompassing the radially projecting flange and an elastomeric member. An annular compression ring is attached to the opening of the annular channel to axially compress and extrude the elastomeric member to fill the annular channel around the radial flange within the inertia ring. Projections defining an intermittent annular inner rim of the inertia mass extend through openings between the spokes of the hub and cooperate with an annular outer rim of the inertia mass to retain the compression ring.

Abstract: In some embodiments, a chip includes transmitters and receivers, and control circuitry. The control circuitry to cause some of the transmitters and receivers to be inoperative in response to an estimated activity level being in a first range, while others of the transmitters and receivers remain operative. Other embodiments are described and/or claimed.

Abstract: Memory control techniques for dual channel lockstep configurations are disclosed. In accordance with one example embodiment, a memory controller issues two burst-length 4 DRAM commands to two double-data-rate (DDR) DRAM sub-channels behind a memory buffer (e.g., FB-DIMM or buffer-on-board). The two commands are in time-staggered lockstep. The time-stagger allows data coming back from the two back-side DDR sub-channels to flow naturally on the host channel without conflict. Multiple DIMMs can be used to obtain chip-fail ECC capabilities and to reclaim at least some of the lost performance imposed by the burst-length of 4 s typically associated with dual channel lockstep memory controllers. The techniques can be implemented, for instance, with a buffered memory solution such as fully buffered DIMM (FB-DIMM) or buffer-on-board configurations.

Abstract: A memory controller uses a scheme to retire two entries from a replay queue due to a single non-error response. Advantageously, entries in a replay queue may be retired earlier than conventional systems, minimizing the size of the replay queue.

Abstract: A memory controller uses a scheme to retire two entries from a replay queue due to a single non-error response. Advantageously, entries in a replay queue may be retired earlier than conventional systems, minimizing the size of the replay queue.

Abstract: A multi-mode vibration damper includes a hub comprising radially projecting spokes, an inertia mass defining recesses for receiving the hub spokes and a damping member between the spokes and recess sidewalls. The damping member is configured to provide vibration damping via substantially compressive stress in the damping member between the hub and inertia mass. An exemplary vibration damper provides vibration damping in a plurality of damping modes and at a plurality of damping frequencies. Exemplary embodiments of the vibration damper provide reduced parasitic inertia and a rocking mode below the torsional mode of the damper.

Abstract: A torsional vibration damper having a hub carrying a radially projecting flange and an annular inertia mass defining an annular channel encompassing the radially projecting flange and an elastomeric member. An annular compression ring is attached to the opening of the annular channel to axially compress and extrude the elastomeric member to fill the annular channel around the radial flange within the inertia ring. Projections defining an intermittent annular inner rim of the inertia mass extend through openings between the spokes of the hub and cooperate with an annular outer rim of the inertia mass to retain the compression ring.

Abstract: A memory controller uses a scheme to retire two entries from a replay queue due to a single non-error response. Advantageously, entries in a replay queue may be retired earlier than conventional systems, minimizing the size of the replay queue.

Abstract: In some embodiments, a chip includes transmitters and receivers, and control circuitry. The control circuitry to cause some of the transmitters and receivers to be inoperative in response to an estimated activity level being in a first range, while others of the transmitters and receivers remain operative. Other embodiments are described and/or claimed.

Abstract: A memory controller to support fully buffered DIMMS by utilizing a write FIFO to switch from the default condition of a memory controller scheduling read requests out-of-order to scheduling write transactions from a write FIFO buffer for a predetermined set of conditions is discussed. For example, the predetermined set of conditions are a write buffer structure has exceeded a threshold (wherein the threshold is fixed or specified by a configuration register) and a memory controller has posted a predetermined number of writes to an AMB write FIFO structure (the predetermined number can be fixed or specified by a configuration register).

Abstract: A system includes a memory device. The memory device has a first bank and a second bank. A memory controller has a write request queue to store write requests. When a read bank conflict exists between a first read request to the first bank and a second read request to the first bank, a first write request is executed to the second bank during a delay. The delay takes place after the first read request is executed and before the second read request is executed.

Abstract: The bond strength between a pre-cured elastomeric member and a metal surface is increased by applying a phosphate coating to the metal surface. This is particularly suitable for use in formation of torsional vibration dampeners wherein an elastomeric member is compression fitted between an outer annular ring and a hub thereby decreasing slippage between the annular weigh and the hub.

Abstract: A memory method may select a latency mode, such as read latency mode, based on measuring memory channel utilization. Memory channel utilization, for example, may include measurements in a memory controller queue structure. Other embodiments are described and claimed.

Abstract: A system includes a memory device. The memory device has a first bank and a second bank. A memory controller has a write request queue to store write requests. When a read bank conflict exists between a first read request to the first bank and a second read request to the first bank, a first write request is executed to the second bank during a delay. The delay takes place after the first read request is executed and before the second read request is executed.