Publication number: 20080073512
Abstract: Embodiments of the present invention are directed to a substrate for performing ionization desorption on porous silicon, methods for performing such ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing ionization desorption on silicon comprises a substrate having a surface having a formula of: As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or —O—R1, or O—SiR1, R2, R3 wherein R1, R2, and R3 are selected from the group consisting of alkyl, alkenyl, alkynyl, aromatic, amino alkyl, amino alkenyl, amino alkynyl, pyridinyl, pyrridonyl, and carbonyl, alcohol and carboxylic acid derivatives thereof having one to twenty five atoms, and hydroxyl, amino, amide, carboxyl, ester, carbonyl, sulfhydryl, sulfonyl, phosphoral, bromo, iodo, chloro and fluoro derivatives. The letter “n” represents an integer from 1 to infinity and any vacant valences are silicon atoms, hydrogen or impurities.
Type:
Application
Filed:
July 27, 2007
Publication date:
March 27, 2008
Applicant:
WATERS INVESTMENTS LIMITED
Inventors:
Gary Siuzdak, Eden Go, Zhouxin Shen, Bruce Compton, Edouard Bouvier, Grace Credo