Abstract: A method of making multilayer thin film Li-ion devices that can involve direct current (DC) sputtering of a metal current collector film or pulsed DC sputtering (PDC) of a transparent conducting oxide (TCO) onto a substrate, depositing a very thin metal diffusion barrier using high power impulse magnetron sputtering (HPIMS), depositing one or more ion storage layers or a cathode layer and an electrolyte layer by PDC sputtering or reactive PDC sputtering of a non-insulating target, and depositing a TCO via PDC sputtering or depositing an anode layer by PDC sputtering and a metal current collector by DC sputtering, the combination of these layers depending on the particular device being fabricated.

Abstract: An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

Abstract: A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross field area deposition rate of about 25 to 70 nm/min and simultaneously etching the barrier layer to establish a net field area deposition rate of about 5 to 40 nm/min. The method may also include first performing a protective layer deposition step with a field area deposition rate of about 5 to 20 nm/min without etching the underlying surface then performing a surface modification step with gross deposition and simultaneous etching at a field modification net deposition rate of about ?10 to +40 nm/min.