Patents by Inventor Bruce D. Sartwell

Bruce D. Sartwell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of ion implantation using oxygen and a metallic surface layer formed therefrom
    Patent number: 6696171
    Abstract: A method of ion implantation using oxygen backfill and a modified surface layer formed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 Å.
    Type: Grant
    Filed: November 1, 2001
    Date of Patent: February 24, 2004
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Bruce D. Sartwell, Paul M. Natishan
  • Method of ion implantation using oxygen and a metallic surface layer formed therefrom
    Publication number: 20020102426
    Abstract: A method of ion implantation using oxygen backfill and a modified surface layer formed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 Å.
    Type: Application
    Filed: November 1, 2001
    Publication date: August 1, 2002
    Inventors: Bruce D. Sartwell, Paul M. Natishan
  • Reactive oxygen-assisted ion implantation into metals and products made therefrom
    Patent number: 6335062
    Abstract: A method of ion implantation using oxygen backfill and a modified surface layer formed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 Å.
    Type: Grant
    Filed: September 13, 1994
    Date of Patent: January 1, 2002
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Bruce D. Sartwell, Paul M. Natishan