Patents by Inventor Bruce Draper

Bruce Draper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dental handpieces
    Patent number: 9839491
    Abstract: A dental handpiece may comprise a detachable light source assembly comprising a light source, a power source, and at least one switch, and the detachable light source assembly may be configured to be selectively removable from the handpiece.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: December 12, 2017
    Assignee: CAO Group, Inc.
    Inventors: Jack Nichols, Robert Larsen, Bruce Draper, Densen Cao
  • DENTAL HANDPIECES
    Publication number: 20160058525
    Abstract: A dental handpiece may comprise a detachable light source assembly comprising a light source, a power source, and at least one switch, and the detachable light source assembly may be configured to be selectively removable from the handpiece.
    Type: Application
    Filed: September 2, 2014
    Publication date: March 3, 2016
    Inventors: Jack Nichols, Robert Larsen, Bruce Draper, Densen Cao
  • Monolithic integration of a MOSFET with a MEMS device
    Publication number: 20040012057
    Abstract: An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.
    Type: Application
    Filed: December 12, 2002
    Publication date: January 22, 2004
    Inventors: Reid Bennett, Bruce Draper
  • Monolithic integration of a MOSFET with a MEMS device
    Patent number: 6531331
    Abstract: An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: March 11, 2003
    Assignee: Sandia Corporation
    Inventors: Reid Bennett, Bruce Draper