Abstract: The image of an object with opaque and transparent regions having a contrast less than the contrast threshold of a layer of photoresist when light of a predetermined wavelength to which the photoresist is sensitive is passed through the object and onto the layer of photoresist is enhanced in contrast by the provision of a contrast enhancing layer contiguous to the surface of the photoresist to a value above the contrast threshold of the photoresist. The contrast enhancing layer is constituted of an aryl nitrone compound mixed with a suitable binder.

Abstract: Diaryinitrones are provided which are useful for near UV photolithography.

Abstract: Diarylnitrones are provided which are useful for near UV photolithography.

Abstract: Molybdenum gate electrode material is provided with an upper layer of molybdenum nitride which acts to prevent deposition of source and drain contact metal by selective chemical vapor deposition (CVD). The nitride layer also provides an improved mask for ion implantation process steps. This results in an FET structure exhibiting a high degree of planarity which is desirable for multilevel device fabrication.

Abstract: A layer of aluminum oxide or other insulative metal oxide is employed as an etch stop in the fabrication of very large scale integrated circuit devices. The use of such etch stops permits fabrication of unframed or borderless via openings and correspondingly permits greater metallization line pitch, smaller circuit features, and more reliable interlayer electrical contact. A method for insulative metal oxide deposition is also described.

Abstract: The image of an object with opaque and transparent regions having a contrast lens than the contrast threshold of a layer of photoresist when light of a predetermined wavelength to which the photoresist is sensitive is passed through the object and onto the layer of photoresist is enhanced in contrast by the provision of a contrast enhancing layer contiguous to the surface of the photoresist to a value above the contrast threshold of the photoresist. The contrast enhancing layer is constituted of an aryl nitrone compound mixed with a suitable binder.

Abstract: Spin castable mixtures having aryl nitrones are provided which are useful in making photobleachable layers for use in contrast enhanced photolithography.

Abstract: Spin castable polymethylmethacrylate photoresist compositions are provided utilizing certain cinnamic acid derivatives as dyes capable of absorbing light at about 436 nm and substantially transparent to light at about 220-250 nm. The spin castable polymethylmethacrylate resist compositions are used in making semiconductor devices by multilayer photoresist methods.

Abstract: A photobleachable layer has been found to improve the resolution limits of two-layer photoresists for making integrated circuits.

Abstract: Spin castable polymethylmethacrylate photoresist compositions are provided utilizing certain cinnamic acid derivatives as dyes capable of absorbing light at about 436 nm and substantially transparent to light at about 220-250 nm. The spin castable polymethylmethacrylate resist compositions are used in making semiconductor devices by multilayer photoresist methods.

Abstract: Apparatus is disclosed for uniform exposure of a plurality of objects such as semiconductor wafers to radiation utilizing sources of radiation of linear configuration. The apparatus includes a baffle assembly of particular construction and constitution situated between the linear sources and the region to be irradiated.

Abstract: A method of defining in a substrate of silicon an active region, a region of field oxide and an isolating wall of silicon dioxide therebetween in a single masking step. The substrate is covered in succession with a thin layer of silicon dioxide, a thick layer of silicon nitride and a first film of titanium. The first film of titanium is covered with a layer of photoresist which has a removed portion and a retained portion in registry with the active region. The first film of titanium and the layer of silicon nitride are etched through the removed portions of the layer of photoresist to form an opening extending to the thin layer of silicon dioxide and partially underlying the retained portion of the photoresist layer by a predetermined lateral distance. A second film of titanium is deposited on the retained portion of the photoresist layer and the exposed portion of the thin layer of silicon dioxide.

Abstract: A method for producing high resolution pattern in a thick layer of polymeric plastic resist is described. The method uses a thin top layer of photo resist in which the desired pattern is formed. The pattern is transferred to a thin metallic inter-layer by wet etching the metallic layer and is subsequently transferred to the thick layer of polymeric plastic by reactive ion etching in oxygen.

Abstract: A method is described for forming a desired pattern in a layer of polymethyl methacrylate resist formed on a substrate by irradiating the layer with a pattern of radiation substantially identical to the desired pattern and thereafter immersing the layer of polymethyl methacrylate in a solution of acetone to remove the irradiated portion of the layer of polymethyl methacrylate.

Abstract: A method of enhancing the adhesion of polymethyl methacrylate to a surface of silicon dioxide utilizing a solution of carboxylic acid is described.

Abstract: A device is disclosed, and a method for construction, in which gallium arsenide phosphide diode chips are employed to produce an inexpensive thermometer that has a broad range, accurate, temperature sensitivity. The thermometer does not require recalibration to maintain accuracy and is rugged in construction. The chip described is a type commonly found in light-emitting diodes.