Abstract: Disclosed is a method and apparatus for evaluating margin voltages in single poly EEPROM cells. Briefly, the invention involves shifting the cell's threshold voltage higher, resulting in a corresponding rise in the margin voltage, so that testing for the erase margin may be conducted in the positive voltage range. The present invention implements a variety of solutions to the problem, including both innovations in cell processing and circuitry. In one embodiment, the process steps employed to create the floating gate transistor are changed in order to increase its threshold voltage. Alternatively, or in combination with these general process changes, the width of the floating gate transistor may be reduced, resulting in a corresponding increase in the margin voltage.

Abstract: An electronic circuit tester (e.g., for testing integrated circuit wafers or packaged integrated circuits) is provided. The tester is preferably based on a relatively inexpensive computer system such as a personal computer and includes at least one high-precision clock circuit that is programmable with respect to frequency and number of clock pulses. The high-precision clock circuit is connectable to the circuit being tested to permit certain timing-critical tests to be performed, even though a large number of other data channels in the tester are controlled by a relatively low speed clock circuit. The tester also includes analog circuitry that can be programmed to provide various analog signals suitable for performing parametric testing on an electronic device under test.