Abstract: Methods of cleaning a photomask may include heating residual coupling material on a surface of the photomask. The photomask may be characterized by active regions and edge regions. The residual coupling material may be located on portions of the edge regions of the photomask. The methods may include applying an etchant to the residual coupling material. The methods may also include rinsing the etchant from the photomask. A portion of the active regions of the photomask may be maintained substantially free of the etchant during the method.

Abstract: Methods of cleaning a photomask may include heating residual coupling material on a surface of the photomask. The photomask may be characterized by active regions and edge regions. The residual coupling material may be located on portions of the edge regions of the photomask. The methods may include applying an etchant to the residual coupling material. The methods may also include rinsing the etchant from the photomask. A portion of the active regions of the photomask may be maintained substantially free of the etchant during the method.

Abstract: In methods and apparatus for cleaning a wafer, a cleaning liquid is sprayed or jetted in a direction generally tangent to the circular edge of a spinning wafer. This enhances removal of contaminants from areas near the edge. Re-deposition of contaminant pieces or particles back onto the wafer is reduced because the direction of the spray carries the contaminant off of the wafer. Insoluble contaminant films, such as post etch residue, may be removed via one or more of the pressure of the cleaning liquid, the effects of higher process temperatures from heating the cleaning liquid, and by the chemical composition of the cleaning liquid.