Abstract: An indium oxide/tin oxide powder with 5-15 wt. % tin oxide is subjected to an annealing treatment at T≧1, 000° C. and is then partially reduced and subjected to hot isostatic pressing to produce a sputtering target with a density of at least 95% of the theoretical density and a thermal conductivity of at least 14 Wm−1K−1.

Abstract: Target for a magnetron-cathode sputtering apparatus is made from a cobalt base alloy containing additional elements in such concentrations that intermetallic phases are formed with at least one of these elements and intermetallic phases are observed on the basis of the phase diagram in the state of equilibrium at the operating temperature of the target. The grain boundaries, sub-grain boundaries, twin-grain boundaries or slip bands of the cobalt mixed crystal forming the matrix are decorated with the elements forming the intermetallic phases. X-ray diffraction diagrams made from the target display reflections of an intermetallic phase which is largely absent in the cast state and which forms only during a heat treatment in the temperature range below the solidus temperature of the alloy by a solid state reaction.

Abstract: The tin-containing component of a powder mixture includes SnO and is subjected to a mixing treatment with the In.sub.2 O.sub.3 before compaction to adjust the degree of reduction of the sputtering target in a simple and reproducible manner.

Abstract: A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.

Abstract: Oxide-ceramic targets of partially reduced indium oxide-tin oxide mixtures are described. The targets provide high sputter performances, and they exhibit an essentially defined degree of reduction between 0.02 and 0.3, a density between 75 and 98% of the theoretical density and a specific electric resistance between 89.times.10.sup.-3 and 0.25.times.10.sup.-3 .OMEGA. cm. The degree of reduction must not deviate at any point on the target surface by more than 5% from the average degree of reduction of the target. The targets are produced by means of hot-pressing the oxide mixtures which were partially reduced beforehand in a special method step.