Patents by Inventor Bruce H. Newcome

Bruce H. Newcome has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210305037
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: February 1, 2021
    Publication date: September 30, 2021
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 10910208
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: February 2, 2021
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20200258733
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: April 23, 2020
    Publication date: August 13, 2020
    Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 10636644
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: April 28, 2020
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20190385831
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: August 30, 2019
    Publication date: December 19, 2019
    Inventors: David A. REED, Bruno W. SCHUELER, Bruce H. NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 10403489
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 3, 2019
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20180330935
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: July 18, 2018
    Publication date: November 15, 2018
    Inventors: David A. REED, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Patent number: 10056242
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: August 21, 2018
    Assignee: Nova Measuring Instruments Inc.
    Inventors: David A. Reed, Bruno W. Schueler, Bruce H. Newcome, Rodney Smedt, Chris Bevis
  • Publication number: 20180025897
    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
    Type: Application
    Filed: February 10, 2016
    Publication date: January 25, 2018
    Inventors: David A. REED, Bruno W SCHUELER, Bruce H NEWCOME, Rodney SMEDT, Chris BEVIS
  • Patent number: 8011830
    Abstract: A method and a system for calibrating an X-ray photoelectron spectroscopy (XPS) measurement are described. The method includes using an X-ray beam to generate an XPS signal from a sample and normalizing the XPS signal with a measured or estimated flux of the X-ray beam. The system includes an X-ray source for generating an X-ray beam and a sample holder for positioning a sample in a pathway of the X-ray beam. A detector is included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. Also included are a flux detector for determining a measured or estimated flux of the X-ray beam and a computing system for normalizing the XPS signal with the measured or estimated flux of the X-ray beam.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: September 6, 2011
    Assignee: Revera Incorporated
    Inventors: Bruno W. Schueler, David A. Reed, Bruce H. Newcome, Jeffrey A. Moore
  • Publication number: 20090268877
    Abstract: A method and a system for calibrating an X-ray photoelectron spectroscopy (XPS) measurement are described. The method includes using an X-ray beam to generate an XPS signal from a sample and normalizing the XPS signal with a measured or estimated flux of the X-ray beam. The system includes an X-ray source for generating an X-ray beam and a sample holder for positioning a sample in a pathway of the X-ray beam. A detector is included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. Also included are a flux detector for determining a measured or estimated flux of the X-ray beam and a computing system for normalizing the XPS signal with the measured or estimated flux of the X-ray beam.
    Type: Application
    Filed: April 27, 2009
    Publication date: October 29, 2009
    Inventors: Bruno W. Schueler, David A. Reed, Bruce H. Newcome, Jeffrey A. Moore
  • Patent number: 5103083
    Type: Grant
    Filed: February 15, 1990
    Date of Patent: April 7, 1992
    Assignee: Charles Evans & Associates
    Inventors: David A. Reed, Bruce H. Newcome
  • Patent number: 4490806
    Abstract: A system for high speed acquisition and storage of data from transient electrical signal waveforms sampled in time at a multiplicity of points, and where it is desired to collect and store data in real time in a mass storage unit, but where the data rate is in excess of the apparent rate at which data can be transferred to mass storage. The overall system employs two levels of data reduction, the first being digital integration (summation) and the second being data processing. In the digital summation section memory read and write cycles overlap for higher speed. In one embodiment, a charge-coupled device is employed as an input element to reduce the data rate prior to subsequent digital processing. The system is capable of recording all the intensities of all transients continuously without loss of data significance.
    Type: Grant
    Filed: June 4, 1982
    Date of Patent: December 25, 1984
    Assignee: Research Corporation
    Inventors: Christie G. Enke, Bruce H. Newcome, John F. Holland