Abstract: A method for enhancing the light yield of a doped scintillation crystal may include a reducing step if the crystal includes a dopant, such as cerium in a first oxidation state, such as the 4+ state. The scintillation crystal may include a rare earth silicate. The reducing may include heating in an oxygen-free ambient. The reducing may be used after an oxygen vacancy filling step that causes at least some of the dopant to increase in its oxidation state.

Abstract: A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.

Abstract: A single crystal having the general composition, Ce2x(Lu1-yYy)2(1-x)SiO5 where x=approximately 0.00001 to approximately 0.05 and y=approximately 0.0001 to approximately 0.9999; preferably where x ranges from approximately 0.0001 to approximately 0.001 and y ranges from approximately 0.3 to approximately 0.8. The crystal is useful as a scintillation detector responsive to gamma ray or similar high energy radiation. The crystal as scintillation detector has wide application for the use in the fields of physics, chemistry, medicine, geology and cosmology because of its enhanced scintillation response to gamma rays, x-rays, cosmic rays and similar high energy particle radiation.

Abstract: A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.

Abstract: A single crystal having the general composition, Ce2x(Lu1−yYy)2(1−x)SiO5 where x=approximately 0.00001 to approximately 0.05 and y=approximately 0.0001 to approximately 0.9999; preferably where x ranges from approximately 0.0001 to approximately 0.001 and y ranges from approximately 0.3 to approximately 0.8. The crystal is useful as a scintillation detector responsive to gamma ray or similar high energy radiation. The crystal as scintillation detector has wide application for the use in the fields of physics, chemistry, medicine, geology and cosmology because of its enhanced scintillation response to gamma rays, x-rays, cosmic rays and similar high energy particle radiation.

Abstract: An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14 wherein A is strontium, B is niobium, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.

Abstract: An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14, wherein A is calcium, B is niobium or tantalum, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.

Abstract: An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14, wherein A is calcium, B is niobium or tantalum, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.

Abstract: An electronic filter includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14, wherein A is strontium, B is tantalum, C is gallium, D is silicon, and E is oxygen. A plurality of pairs of electrodes are connected to and cooperate with the piezoelectric layer to define a SAW or BAW filter, for example. The ordered Langasite structure compound may have a substantially perfectly ordered structure.

Abstract: An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14 wherein A is strontium, B is niobium, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.

Abstract: A tunable, solid state laser device with both visible and infrared laser emission is developed with a trivalent ytterbium-doped yttrium calcium oxyborate crystal as the host crystal. The Yb:YCOB crystal generates an infrared fundamental light over a wide bandwidth, from approximately 980 nanometers (nm) to approximately 1100 nm. The bandwidth generated by the Yb:YCOB crystal is approximately 100 nm wide and supports the generation of pulsed infrared light or when self-frequency doubled provides a compact, efficient, source of tunable, visible, blue or green laser light in wavelengths of approximately 490 nm to approximately 550 nm.

Abstract: Neodymium-doped yttrium calcium oxyborate (Nd:YCOB) is the single active gain element for a solid-state laser device capable of achieving both lasing and self-frequency doubling optical effects. A pumping source for optically pumping Nd:YCOB can generate a laser light output of approximately 400 mW at approximately 1060 nm wavelength and a self-frequency doubled output of approximately 60 mW at approximately 530 nm wavelength. Thus, a laser device can be designed that is compact, less expensive and a high-powered source of visible, green laser light.

Abstract: Neodymium-doped yttrium calcium oxyborate (Nd:YCOB) is the single active gain element for a solid-state laser device capable of achieving both lasing and self-frequency doubling optical effects. A pumping source for optically pumping Nd:YCOB can generate a laser light output of approximately 400 mW at approximately 1060 nm wavelength and a self-frequency doubled output of approximately 60 mW at approximately 530 nm wavelength. Thus, a laser device can be designed that is compact, less expensive and a high-powered source of visible, green laser light.

Abstract: A tunable, solid state laser device with both visible and infrared laser emission is developed with a trivalent ytterbium-doped yttrium calcium oxyborate crystal as the host crystal. The Yb:YCOB crystal generates an infrared fundamental light over a wide bandwidth, from approximately 980 nanometers (nm) to approximately 1100 nm. The bandwidth generated by the Yb:YCOB crystal is approximately 100 nm wide and supports the generation of pulsed infrared light or when self-frequency doubled provides a compact, efficient, source of tunable, visible, blue or green laser light in wavelengths of approximately 490 nm to approximately 550 nm.

Abstract: A tunable, solid state laser device with both visible and infrared laser emission is developed with a trivalent ytterbium-doped yttrium calcium oxyborate crystal as the host crystal. The Yb:YCOB crystal generates an infrared fundamental light over a wide bandwidth, from approximately 980 nanometers (nm) to approximately 1100 nm. The bandwidth generated by the Yb:YCOB crystal is approximately 100 nm wide and supports the generation of pulsed infrared light or when self-frequency doubled provides a compact, efficient, source of tunable, visible, blue or green laser light in wavelengths of approximately 490 nm to approximately 550 nm.

Abstract: Neodymium-doped yttrium calcium oxyborate (Nd:YCOB) is the single active gain element for a solid-state laser device capable of achieving both lasing and self-frequency doubling optical effects. A pumping source for optically pumping Nd:YCOB can generate a laser light output of approximately 400 mW at approximately 1060 nm wavelength and a self-frequency doubled output of approximately 60 mW at approximately 530 nm wavelength. Thus, a laser device can be designed that is compact, less expensive and a high-powered source of visible, green laser light.

Abstract: Laser pumping and flashlamp pumping of apatite crystals such as trivalent neodymium-doped strontium fluorapatite (Sr.sub.5 (PO.sub.4).sub.3 F) emits efficient lasing at both 1.059 and 1.328 .mu.m. The pump sources for the SFAP material doped with Nd.sup.3+ includes pulsed Cr:LiSrAlF.sub.6 tuned to approximately 805.4 nm. Alternatively, similar results occurred using a continuous wave laser source of Ti:sapphire tuned to approximately 805.4 nm. A preferred embodiment includes a resonant cavity with a high reflectivity mirror having a reflectivity of 100% and an output coupler mirror with a reflectivity of less than 100%. An optional tuning component such as a Pockels Cell-Polarizer combination can also be included. The SFAP material doped with Nd.sup.3+ exhibits a large absorption cross section, high emission cross section, and long radiative lifetime.

Abstract: Semiconductor light emitting and sensing devices are comprised of a lattice matching wurtzite structure oxide substrate and a III-V nitride compound semiconductor single crystal film epitaxially grown on the substrate. Single crystals of these oxides are grown and the substrates are produced. The lattice matching substrates include Lithium Aluminum Oxide (LiAlO.sub.2), Lithium Gallium Oxide (LiGaO.sub.2), Lithium Silicon Oxide (Li.sub.2 SiO.sub.3), Lithium Germanium Oxide (Li.sub.2 GeO.sub.3), Sodium Aluminum Oxide (NaAlO.sub.2), Sodium Gallium Oxide (NaGaO.sub.2), Sodium Germanium Oxide (Na.sub.2 GeO.sub.3), Sodium Silicon Oxide (Na.sub.2 SiO.sub.3), Lithium Phosphor Oxide (Li.sub.3 PO.sub.4), Lithium Arsenic Oxide (Li.sub.3 AsO.sub.4), Lithium Vanadium Oxide (Li.sub.3 VO.sub.4), Lithium Magnesium Germanium Oxide (Li.sub.2 MgGeO.sub.4), Lithium Zinc Germanium Oxide (Li.sub.2 ZnGeO.sub.4), Lithium Cadmium Germanium Oxide (Li.sub.2 CdGeO.sub.4), Lithium Magnesium Silicon Oxide (Li.sub.2 MgSiO.sub.

Abstract: Crystals made of RbNbB.sub.2 O.sub.6 (RNB) crystal or any of the XYB.sub.2 O.sub.6 family members (where X.dbd.Li, Na, K, Rb, Cs, Tl; Y.dbd.Nb, Ta, V, Sb) or related combinations in solid solutions are useful as Nonlinear Optical Devices. These crystals can produce nonlinear optical conversion effects including second harmonic generation (SHG), sum frequency generation (SFG), differential frequency generation (DFG) and optical parametric amplification (OPA). These nonlinear conversions operate on both bulk crystals and thin films including waveguide devices. RNB crystals have the advantage over prior art crystals for having better UV (ultra-violet) transparency on the order of 270 nm.

Abstract: Yb.sup.3+ and Nd.sup.3+ doped Sr.sub.5 (VO.sub.4).sub.3 F crystals serve as useful infrared laser media that exhibit low thresholds of oscillation and high slope efficiencies, and can be grown with high optical quality. These laser media possess unusually high absorption and emission cross sections, which provide the crystals with the ability to generate greater gain for a given amount of pump power. Many related crystals such as Sr.sub.5 (VO.sub.4).sub.3 F crystals doped with other rare earths, transition metals, or actinides, as well as the many structural analogs of Sr.sub.5 (VO.sub.4).sub.3 F, where the Sr.sup.2+ and F.sup.- ions are replaced by related chemical species, have similar properties.