Abstract: A method of forming a surface micromachined MEMS device applies an insulator to a substrate, and then deposits a conductive path on the insulator. The conductive path is capable of transmitting an electronic signal between two points on the MEMS device. The insulator electrically isolates the conductive path from the substrate. The MEMS device illustratively is free of semiconductor junctions formed by the substrate and the conductive path.

Abstract: A method of forming a micromachined device embeds a first material within a sacrificial material, and then removes such first material to form a channel through the sacrificial material. The method then directs a sacrificial material removal fluid through the channel. The sacrificial material removal fluid removes at least a portion of the sacrificial material.

Abstract: An apparatus has first and second wafers, and a conductive rim between the first and second wafers. The conductive rim electrically and mechanically connects the first and second wafers. In addition, the conductive rim and second wafer at least in part seal an area on the surface of the first wafer.

Abstract: A method of forming a MEMS device produces a device layer wafer having a pre-formed conductive pathway before coupling it with a handle wafer. To that end, the method produces the noted device layer wafer by 1) providing a material layer, 2) coupling a conductor to the material layer, and 3) forming at least two conductive paths through at least a portion of the material layer to the conductor. The method then provides the noted handle wafer, and couples the device layer wafer to the handle wafer. The wafers are coupled so that the conductor is contained between the material layer and the handle wafer.

Abstract: A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.

Abstract: A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack includes a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.

Abstract: A method of forming a MEMS device produces a device layer wafer having a pre-formed conductive pathway before coupling it with a handle wafer. To that end, the method produces the noted device layer wafer by 1) providing a material layer, 2) coupling a conductor to the material layer, and 3) forming at least two conductive paths through at least a portion of the material layer to the conductor. The method then provides the noted handle wafer, and couples the device layer wafer to the handle wafer. The wafers are coupled so that the conductor is contained between the material layer and the handle wafer.

Abstract: A method of forming a surface micromachined MEMS device applies an insulator to a substrate, and then deposits a conductive path on the insulator. The conductive path is capable of transmitting an electronic signal between two points on the MEMS device. The insulator electrically isolates the conductive path from the substrate. The MEMS device illustratively is free of semiconductor junctions formed by the substrate and the conductive path.

Abstract: A MEMS device has a first silicon layer, a second silicon layer, and an insulating layer between the first and second silicon layers. The first silicon layer has at least a primary portion and an isolated portion, where the isolated portion has no electrical connection with the primary portion via the first silicon layer. The MEMS device also has a conductive element within the insulating layer. The conductive element is in electrical contact with both the primary portion and the isolated portion.

Abstract: A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.