Abstract: Integrated circuit FIFO memory devices may be controlled using a register file, an indexer and a controller. The FIFO memory device includes a FIFO memory that is divisible into up to a predetermined number of independent FIFO queues. The register file includes the predetermined number of words. A respective word is configured to store one or more parameters for a respective one of the FIFO queues. The indexer is configured to index into the register file, to access a respective word that corresponds to a respective FIFO queue that is accessed. The controller is responsive to the respective word that is accessed, and is configured to control access to the respective FIFO queue based upon at least one of the one or more parameters that is stored in the respective word. Thus, as the number of FIFO queues expands, the number of words in the register file may need to expand, but the controller and/or indexer need not change substantially.

Abstract: Integrated circuit FIFO memory devices may be controlled using a register file, an indexer and a controller. The FIFO memory device includes a FIFO memory that is divisible into up to a predetermined number of independent FIFO queues. The register file includes the predetermined number of words. A respective word is configured to store one or more parameters for a respective one of the FIFO queues. The indexer is configured to index into the register file, to access a respective word that corresponds to a respective FIFO queue that is accessed. The controller is responsive to the respective word that is accessed, and is configured to control access to the respective FIFO queue based upon at least one of the one or more parameters that is stored in the respective word. Thus, as the number of FIFO queues expands, the number of words in the register file may need to expand, but the controller and/or indexer need not change substantially.

Abstract: Described is a last stage decoder that generates a local word line signal within a bank of a single-ported memory cell array structure. The decoder inputs predecoded global row address signals, as well as predecoded local row address signals. In order to generate the local word line signal, and thus access a memory cell within a given bank, both one predecoded global row address signal, as well as one predecoded local row address signal must be present. The predecoded local row address signal turns on a pass gate transistor, and allows the predecoded global row address signal to pass through the pass gate transistor and create the local word line signal.